Xingsheng Wang
·Paper Publications
- [21] Yujie Song,Qiwen Wu,Chengxu Wang,Xiangshui Miao.Xingsheng Wang.Two Memristors-based XOR Logic Demonstrated with Encryption/Decryption.[J].IEEE Electron Device Letters,2021,(9):1398-1401
- [22] Yujie Song,Qiwen Wu,Chengxu Wang,Shuo Du,Lianbin Zhang,MIAO XIANG SHUI.Xingsheng Wang.High switching uniformity in HfOx-based memristors by adding polydopamine-derived Ag nanoparticles on the electrode.[J].Applied Physics Letters,2021,(22):223501
- [23] Chengxu Wang, Jibo Wu, Hao Yu, Genquan Han, Xiangshui Miao, Xingsheng Wang.Xingsheng Wang.Effects of Temperature on the Performance of Hf0.5Zr0.5O2-Based Negative Capacitance FETs.[J].IEEE Electron Device Letters,2020,(11):1625-1628
- [24] Tao Wu, Haowen Luo, Xingsheng Wang,Asen Asenov, Xiangshui Miao.Xingsheng Wang.A Predictive 3-D Source/Drain Resistance Compact Model and the Impact on 7 nm and Scaled FinFETs.[J].IEEE Transactions on Electron Devices,2020,(6):2255-2262
- [25] Xiao-Di Huang, Yi Li , Hao-Yang Li, Kan-Hao Xue , Xingsheng Wang ,Xiang-Shui Miao.Yi Li.Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor.[J].IEEE Electron Device Letters,2020,(4):549-552
- [26] Qiang Huo, Zhenhua, Wu, Weixing Huang, Geyu Tang, Jiaxin Yao, Yongpan Liu, Xiaojin Zhao, Ling Li, Ming Liu.Zhenhua Wu, Xingsheng Wang, Feng Zhang.A Novel General Compact Model Approach for 7-nm Technology Node Circuit Optimization From Device Perspective and Beyond.[J].Journal of the Electron Device Society,2020,(1):295-301
- [27] Qiang Huo, Zhenhua Wu, Weixing Huang, Jiaxin Yao, Jianhui Bu, Ming Liu.Zhenhua Wu, Xingsheng Wang, Feng Zhang, Ling Li.Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and Beyond.[J].IEEE Transactions on Electron Devices,2020,(3):907-914
- [28] Huan Liu, Chengxu Wang, Genquan Han , Jing Li , Yue Peng , Yan Liu , Xingsheng Wang , Ni Zhong, Chungang Duan, Xinran Wang, Nuo Xu, Tsu-Jae King Liu, Yue Hao.Genquan Han.ZrO2 Ferroelectric FET for Non-volatile Memory Application.[J].IEEE Electron Device Letters,2019,(9):1419-1422
- [29] Meng Duan,M. Duan , C. Navarro , B. Cheng, F. Adamu-Lema , Xingsheng Wang , V. P. Georgiev , F. Gamiz , C. Millar,A. Asenov.Meng Duan.Thorough Understanding of Retention Time of Z2FET Memory Operation.[J].IEEE Transactions on Electron Devices,2019,(1):383-388
- [30] Xingsheng Wang, V. P. Georgiev, F. Adamu-Lema, L. Gerrer, S. M. Amoroso,A. Asenov.Xingsheng Wang.Chapter 6: TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs.Integrated Nanodevice and Nanosystem Fabrication: Materials, Techniques, and New Opportunities,2017,