Indexed by:Journal paper First Author:Xiao-Di Huang Correspondence Author:Yi Li Co-author: Yi Li , Hao-Yang Li, Kan-Hao Xue , Xingsheng Wang ,Xiang-Shui Miao Journal:IEEE Electron Device Letters Included Journals:SCI、EI Place of Publication:USA Discipline:Engineering First-Level Discipline:Electronic Science And Technology Document Type:J Volume:41 Issue:4 Page Number:549-552 Key Words:Memristor, resistive switching, bilayer structure, forming-free, thermal stability Date of Publication:2020-04-01 Abstract:Throughoxygenprofileengineering,we fabricated W/AlOx/Al2 O3 /Pt bilayer memristors with a 250-nm feature size. The AlOx fabricated by sputtering serves as an oxygen vacancy source, whereas the Al2 O3 deposited by atomic layer deposition acts as a dominant resistive switching (RS) layer. Our devices show forming-free RS behaviors with high speed (28 ns), uniform resistance distribution, large on/off ratio (∼103 @100K, ∼103 @298K, and∼80@400K), and good retention. Besides, temperature stability with record high endurance from cryogenic to high-temperature(108 @100K,1010 @298K,and107 @400K) is dem