Indexed by: Journal paper

First Author: Huan Liu

Correspondence Author: Genquan Han

Co-author: Chengxu Wang, Genquan Han , Jing Li , Yue Peng , Yan Liu , Xingsheng Wang , Ni Zhong, Chungang Duan, Xinran Wang, Nuo Xu, Tsu-Jae King Liu, Yue Hao

Journal: IEEE Electron Device Letters

Included Journals: EI、SCI

Place of Publication: USA

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 40

Issue: 9

Page Number: 1419-1422

Key Words: Anti-ferroelectric, ferroelectric, ferroelectric field-effect transistor (FeFET), ZrO2

Date of Publication: 2019-09-01

Abstract: We demonstrate for the first time ZrO2 ferroelectric field-effect transistors (FeFETs) for embedded non-volatilememoryapplications.Multiplesweepsofpolarization versus voltage measurement demonstrate that a metal/ZrO2/Ge capacitor is entirely free of wake-up effect and hassignificantlyimprovedfatiguecharacteristicscompared to a HfZrOx controldevice.Thanks to relativelysmall remnant polarization and a high-quality ZrO2 /Ge interface, up to 107 cycles program/erase endurance, 10 ns program/erase speed, and >10-year data retention at 85 °C are achieved.