Indexed by:Journal paper First Author:Meng Duan Correspondence Author:Meng Duan Co-author:M. Duan , C. Navarro , B. Cheng, F. Adamu-Lema , Xingsheng Wang , V. P. Georgiev , F. Gamiz , C. Millar,A. Asenov Journal:IEEE Transactions on Electron Devices Included Journals:EI、SCI Place of Publication:USA Discipline:Engineering First-Level Discipline:Electronic Science And Technology Document Type:J Volume:66 Issue:1 Page Number:383-388 Key Words:Dynamicrandomaccessmemory(DRAM), generation, injection, recombination, retention time, Shockley–Read Date of Publication:2019-01-01 Abstract:A recently reported zero impact ionization and zero subthreshold swing device Z2FET is a promising candidate for capacitor-less dynamic random access memory (DRAM) memory cell. In the memory operation, dataretentiontimedeterminesrefreshfrequencyandisone ofthemostimportantmemorymerits.Inthispaper,wehave systematicallyinvestigatedthe Z2FET retention time based on a newly proposed characterization methodology. It is found that the degradation of HOLD “0” retention time originates from the gated-silicon on insulator (SOI) portion rather than the intrinsic-SOI region of the Z2FET. Electrons accumul