Indexed by: Journal paper

First Author: Chengxu Wang

Correspondence Author: Xingsheng Wang

Co-author: Jibo Wu, Hao Yu, Genquan Han, Xiangshui Miao, Xingsheng Wang

Journal: IEEE Electron Device Letters

Included Journals: EI、SCI

Affiliation of Author(s): Huazhong University of Science and Technology

Place of Publication: USA

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 41

Issue: 11

Page Number: 1625-1628

Key Words: Negative capacitance (NC), Hf0.5Zr0.5O2, transistor, temperature, subthreshold slope, ON currents

Date of Publication: 2020-10-25

Abstract: There arises the growing interest of negative capacitance field effect transistors (NCFETs) for low-power applications, however, temperature as an inevitable influencing factor, its effects on NCFETs require more research for practical applications. In this work, we fabricated Hf0.5Zr0.5O2 (HZO) based NC p-channel FETs and developed a corresponding TCAD simulation deck to study the temperature impact. DC characteristics of NCFETs and its baseline MOSFETs at the common operation temperature range (-50 to 85℃) are measured and simulated. With the increase of temperature, NCFET subthreshold slope

Links to published journals: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9187665