Indexed by: Journal paper

First Author: Qiang Huo

Correspondence Author: Zhenhua Wu, Xingsheng Wang, Feng Zhang, Ling Li

Co-author: Zhenhua Wu, Weixing Huang, Jiaxin Yao, Jianhui Bu, Ming Liu

Journal: IEEE Transactions on Electron Devices

Included Journals: EI、SCI

Affiliation of Author(s): IMECAS, Huazhong University of Science and Technology

Place of Publication: USA

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 67

Issue: 3

Page Number: 907-914

Key Words: 7-nmtechnologynodeandbeyond,devicecircuit cooptimization, FinFET, static random access memory (SRAM)

Date of Publication: 2020-03-01