Indexed by: Journal paper

First Author: Yujie Song

Correspondence Author: Xingsheng Wang

Co-author: Qiwen Wu,Chengxu Wang,Shuo Du,Lianbin Zhang,MIAO XIANG SHUI

Journal: Applied Physics Letters

Included Journals: SCI、EI

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 118

Issue: 22

Page Number: 223501

Key Words: memristor, uniformity, variation, PDA, AgNPs, temperature, simulation

DOI number: 10.1063/5.0049702

Date of Publication: 2021-05-31

Impact Factor: 3.597

Abstract: In this Letter, a Ti/HfOx/Pt memristor with a modified Ti electrode created by inserting polydopamine (PDA)/Ag nanoparticles (AgNPs) between the Ti electrode and functional layer is reported. This memristor exhibits a significant improvement in the uniformity of device parameters [including set voltage, reset voltage, high resistance state (HRS) resistances, low resistance state (LRS) resistances, endurance, and retention] compared to conventional memristors. The AgNPs embedded in PDA renders a reduced variability in HRS and LRS resistances from 47% to 7%, and 46% to 11%, respectively. By fitting Poole–Frenkel and Ohmic behavior models, the consistency of the conductive mechanism of the devices before and after modification has been proven, which is further enhanced through variable temperature tests and the simulation of electric field distribution. It is believed that AgNPs play a lightning rod role in guiding the growth of conductive paths; thus, by growing AgNPs in situ on PDA film on the Ti electrode, it reduces the parameter variability.

Links to published journals: https://aip.scitation.org/doi/full/10.1063/5.0049702