华中科技大学主页平台管理系统 Xingsheng Wang--英文主页--Paper Publications

Xingsheng Wang

Recommended Ph.D.Supervisor Recommended MA Supervisor

·Paper Publications

Current position: 英文主页 > Scientific Research > Paper Publications

[31] Xingsheng Wang,X. Wang, B. Cheng, D. Reid, A. Pender, P. Asenov, C. Millar,A. Asenov.Xingsheng Wang.FinFET Centric Variability-Aware Compact Model Extraction and Generation Technology Supporting DTCO.[J].IEEE Transactions on Electron Devices,2015,(10):3139–3146
[32] Asen Asenov,A. Asenov, B. Cheng, X. Wang, A. R. Brown, C. Millar, C. Alexander, S. M. Amoroso, J. B. Kuang,S. Nassif.Asen Asenov.Variability Aware Simulation Based Design-Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization.IEEE Transactions on Electron Devices,2015,(6):1682–1690
[33] Fikru Adamu-Lema, Xingsheng Wang,F. Adamu-Lema, X. Wang, S. M. Amoroso, C. Riddet, B. Cheng, L. Shifren, R. Aitken, S. Sinha, G. Yeric,A. Asenov.Performance and variability of doped multi-threshold FinFETs for 10nm CMOS.IEEE Transactions on Electron Devices,2014,(10):3372-3378
[34] Xingsheng Wang,X. Wang, A. R. Brown, B. Cheng, S. Roy,A. Asenov.Xingsheng Wang.Drain Bias Effects on Statistical Variability and Reliability and Related Subthreshold Variability in 20-nm Bulk Planar MOSFETs.Solid-State Electronics,2014,99–105
[35] Asen Asenov,A. Asenov, B. Cheng, X. Wang, A. R. Brown, D. Reid, C. Millar,C. L. Alexander.Simulation Based Transistor-SRAM Co-Design in the Presence of Statistical Variability and Reliability.Proc. IEEE International Electron Devices Meeting (IEDM),2013,818-821
[36] Xingsheng Wang,X. Wang, B. Cheng, A. R. Brown, C. Millar, J. B. Kuang, S. Nassif,A. Asenov.Xingsheng Wang.Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs.[J].IEEE Transactions on Electron Devices,2013,(8):2485–2492
[37] Xingsheng Wang,Fikru Adamu-Lema,Binjie Cheng,Asen Asenov.Xingsheng Wang.Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis.IEEE Transactions on Electron Devices,2013,(5):1547–1554
[38] Xingsheng Wang,X. Wang, G. Roy, O. Saxod, A. Bajolet, A. Juge,A. Asenov.Xingsheng Wang.Simulation Study of Dominant Statistical Variability Sources in 32-nm High-κ/Metal Gate CMOS.IEEE Electron Device Letters,2012,(5):IEEE Electron Device Letters
[39] Xingsheng Wang, Andrew R. Brown, Binjie Cheng, Asen Asenov.Xingsheng Wang.Statistical Variability and Reliability in Nanoscale FinFETs.[C].Proc. International Electron Devices Meeting (IEDM),2011,103-106
[40] Xingsheng Wang,X. Wang, B. Cheng, A. R. Brown, C. Millar, J. B. Kuang, S. Nassif,A. Asenov.Xingsheng Wang.Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology.[J].IEEE Design & Test,2011,(6):18-28

total41 4/5

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