Xingsheng Wang

·Paper Publications

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Simulation Study of Dominant Statistical Variability Sources in 32-nm High-κ/Metal Gate CMOS
Release time:2018-06-07  Hits:

Indexed by: Journal paper

First Author: Xingsheng Wang

Correspondence Author: Xingsheng Wang

Co-author: X. Wang, G. Roy, O. Saxod, A. Bajolet, A. Juge,A. Asenov

Journal: IEEE Electron Device Letters

Included Journals: EI、SCI

Affiliation of Author(s): University of Glasgow

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Volume: 33

Issue: 5

Page Number: IEEE Electron Device Letters

Date of Publication: 2012-05-01

Links to published journals: https://ieeexplore.ieee.org/document/6168792/