Xingsheng Wang
·Paper Publications
Simulation Study of Dominant Statistical Variability Sources in 32-nm High-κ/Metal Gate CMOS
Release time:2018-06-07  Hits:
Indexed by: Journal paper
First Author: Xingsheng Wang
Correspondence Author: Xingsheng Wang
Co-author: X. Wang, G. Roy, O. Saxod, A. Bajolet, A. Juge,A. Asenov
Journal: IEEE Electron Device Letters
Included Journals: EI、SCI
Affiliation of Author(s): University of Glasgow
Discipline: Engineering
First-Level Discipline: Electronic Science And Technology
Volume: 33
Issue: 5
Page Number: IEEE Electron Device Letters
Date of Publication: 2012-05-01
Links to published journals: https://ieeexplore.ieee.org/document/6168792/