Indexed by: Proceeding Paper

First Author: Xingsheng Wang

Correspondence Author: Xingsheng Wang

Co-author: Andrew R. Brown, Binjie Cheng, Asen Asenov

Journal: Proc. International Electron Devices Meeting (IEDM)

Included Journals: EI

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: C

Page Number: 103-106

Date of Publication: 2011-12-07

Abstract: A comprehensive full-scale 3D simulation study of statistical variability and reliability in emerging, scaled FinFETs on SOI substrate with gate-lengths of 20nm, 14nm and 10nm and low channel doping is presented. Excellent electrostatic integrity and resulting tolerance to low channel doping are perceived as the main FinFET advantages, resulting in a dramatic reduction of statistical variability due to random discrete dopants (RDD). It is found that line edge roughness (LER), metal gate granularity (MGG) and interface trapped charges (ITC) dominate the parameter fluctuations with different dis

Links to published journals: https://ieeexplore.ieee.org/document/6131494