Personal Information:
Professor
Academic Titles:Professor
Paper Publications
- [1]Y. Zhang.Large area 1.2 kV GaN vertical power FinFETs with a record switching figure-of-merit.IEEE Electron Device Lett.,40(1):75-78
- [2]D. Lei.Investigation on temperature dependent DC characteristics of gallium oxide metal-oxide-semiconductor field-effect transistors from 25 °C to 300 °C.Applied Physics Express.2019,12(4):041001-1-041001-4
- [3]D. Lei.High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate.IEEE Journal of the Electron Devices Society.2019,7:596-600
- [4]H. Xie.Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency fT of 310 GHz.Appl. Phys. Expr.2019
- [5]H. Xie.CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson's figure-of-merit of 8.8 TH-V.Appl. Phys. Expr..2020,13(2):026503-1-026503-4
- [6]W. K. Loke.High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers.IEEE Journal of the Electron Devices Society.2020,8:122-125
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