High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate
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Title of Paper:High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate
Journal:IEEE Journal of the Electron Devices Society
All the Authors:Y. Wu,K. Han
First Author:D. Lei
Indexed by:Journal paper
Correspondence Author:X. Gong,Z. Liu
Volume:7
Page Number:596-600
Translation or Not:no
Date of Publication:2019-05-07