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Title of Paper:Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency fT of 310 GHz
Journal:Appl. Phys. Expr
All the Authors:K. E. Lee,K. Ranjan,Y. Gao
First Author:H. Xie
Indexed by:Journal paper
Correspondence Author:G. I. Ng,Z. Liu
Translation or Not:no
Date of Publication:2019-11-22