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Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency fT of 310 GHz

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Title of Paper:Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency fT of 310 GHz

Journal:Appl. Phys. Expr

All the Authors:K. E. Lee,K. Ranjan,Y. Gao

First Author:H. Xie

Indexed by:Journal paper

Correspondence Author:G. I. Ng,Z. Liu

Translation or Not:no

Date of Publication:2019-11-22

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