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Patents
一种用于光波长转换的多晶块体材料的制备方法
Patent description:
胡家林,杨伟锋,唐玉平,黄种富
Application Number:
201910794076.9
Number of Inventors:
4
Service Invention or Not:
no
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一种含稀土栅介质层的超结 SiC MOSFET 及其制造方法
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一种δ掺杂的常关型氧化镓基MIS-HMET器件及其制备方法