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Patents
一种δ掺杂的常关型氧化镓基MIS-HMET器件及其制备方法
Patent description:
杨伟锋,帅浩,张保平
Application Number:
202110493226.X
Number of Inventors:
3
Service Invention or Not:
no
Pre One:
一种用于光波长转换的多晶块体材料的制备方法
Next One:
一种具有盖帽层的常开型氧化镓基HFET器件及其制备方法