Recent Progress in Silicon-Based Spintronic Materials

[BOOK DESCRIPTION]

This book covers the crucial aspects of theoretical and experimental approaches for Si-based spintronic materials. The theory parts emphasize on two first-principles methods — the GW method to improve the insulating gaps of the half metals which are a class of materials ideal for spintronic applications, and the linear response theory to calculate electric and magnetic susceptibilities. Three growth methods for doping transition metal elements in alloy and layered forms in Si will be focused on. Also three methods for characterization will be presented emphasizing on how to interpret experimental results. Finally, recent progress made in the Si-based spintronic materials will be discussed. This book is intended for researchers and graduate students who are interested in designing and growing new spintronic materials, in particular, silicon-based.

[TABLE OF CONTENTS]

Preface                                            vii
    1 Spin-based Materials                         1  (36)
      1.1 Introduction                             1  (3)
        1.1.1 History                              1  (1)
        1.1.2 Spintronic devices                   2  (1)
        1.1.3 Applications                         3  (1)
      1.2 Crystals                                 4  (15)
        1.2.1 Unit cells                           5  (7)
        1.2.2 Determination of the crystal         12 (4)
        structure
        1.2.3 Bloch's theorem                      16 (2)
        1.2.4 Modulated crystal structures         18 (1)
      1.3 Spin dependent interactions              19 (9)
        1.3.1 Direct fermion exchange              20 (5)
        1.3.2 The RKKY interaction                 25 (2)
        1.3.3 The spin-orbit interaction           27 (1)
      1.4 Half-metals                              28 (9)
        1.4.1 Conditions for half-metals           28 (2)
        1.4.2 Interactions resulting in            30 (1)
        half-metallicity
        1.4.3 Estimating the magnetic moment       31 (2)
        1.4.4 Mechanisms that hinder               33 (4)
        half-metallicity
    2 Methods of Studying Spintronics              37 (76)
      2.1 Theory                                   37 (42)
        2.1.1 Density functional theory            38 (4)
        2.1.2 The Kohn-Sham equations              42 (1)
        2.1.3 Approximate forms of the             43 (5)
        exchange-correlation functional
        2.1.4 The augmented plane wave method      48 (4)
        2.1.5 The pseudopotential method           52 (7)
        2.1.6 Linear response theory               59 (3)
        2.1.7 The GW method                        62 (5)
        2.1.8 Methods of calculating Tc            67 (12)
      2.2 Growth methods                           79 (5)
        2.2.1 The ion implantation method          79 (2)
        2.2.2 Vacuum deposition methods            81 (2)
        2.2.3 The molecular beam epitaxy method    83 (1)
      2.3 Characterization                         84 (29)
        2.3.1 Structural properties                85 (5)
        2.3.2 Transport                            90 (4)
        2.3.3 Magnetic characterization            94 (19)
    3 Progress in Si-based Spintronics             113(26)
      3.1 Dilute doped Mn in Si                    113(5)
        3.1.1 Early experiments                    114(1)
        3.1.2 Substitutional Mn in Si supercells   115(3)
      3.2 Si-based digital ferromagnetic           118(7)
      heterostructure
        3.2.1 Perfect δ-layer                119(3)
        3.2.2 Defect models                        122(3)
      3.3 Single doping of Fe and Mn in Si         125(4)
      3.4 Trilayers                                129(4)
      3.5 MnSi Clusters                            133(6)
        3.5.1 Growth of MnSi                       133(3)
        3.5.2 Theoretical Studies of MnSix, x      136(3)
        1.7
Bibliography                                       139(8)
Index                                              147