Recent Progress in Silicon-Based Spintronic Materials
[BOOK DESCRIPTION]
This book covers the crucial aspects of theoretical and experimental approaches for Si-based spintronic materials. The theory parts emphasize on two first-principles methods — the GW method to improve the insulating gaps of the half metals which are a class of materials ideal for spintronic applications, and the linear response theory to calculate electric and magnetic susceptibilities. Three growth methods for doping transition metal elements in alloy and layered forms in Si will be focused on. Also three methods for characterization will be presented emphasizing on how to interpret experimental results. Finally, recent progress made in the Si-based spintronic materials will be discussed. This book is intended for researchers and graduate students who are interested in designing and growing new spintronic materials, in particular, silicon-based.
[TABLE OF CONTENTS]
Preface vii
1 Spin-based Materials 1 (36)
1.1 Introduction 1 (3)
1.1.1 History 1 (1)
1.1.2 Spintronic devices 2 (1)
1.1.3 Applications 3 (1)
1.2 Crystals 4 (15)
1.2.1 Unit cells 5 (7)
1.2.2 Determination of the crystal 12 (4)
structure
1.2.3 Bloch's theorem 16 (2)
1.2.4 Modulated crystal structures 18 (1)
1.3 Spin dependent interactions 19 (9)
1.3.1 Direct fermion exchange 20 (5)
1.3.2 The RKKY interaction 25 (2)
1.3.3 The spin-orbit interaction 27 (1)
1.4 Half-metals 28 (9)
1.4.1 Conditions for half-metals 28 (2)
1.4.2 Interactions resulting in 30 (1)
half-metallicity
1.4.3 Estimating the magnetic moment 31 (2)
1.4.4 Mechanisms that hinder 33 (4)
half-metallicity
2 Methods of Studying Spintronics 37 (76)
2.1 Theory 37 (42)
2.1.1 Density functional theory 38 (4)
2.1.2 The Kohn-Sham equations 42 (1)
2.1.3 Approximate forms of the 43 (5)
exchange-correlation functional
2.1.4 The augmented plane wave method 48 (4)
2.1.5 The pseudopotential method 52 (7)
2.1.6 Linear response theory 59 (3)
2.1.7 The GW method 62 (5)
2.1.8 Methods of calculating Tc 67 (12)
2.2 Growth methods 79 (5)
2.2.1 The ion implantation method 79 (2)
2.2.2 Vacuum deposition methods 81 (2)
2.2.3 The molecular beam epitaxy method 83 (1)
2.3 Characterization 84 (29)
2.3.1 Structural properties 85 (5)
2.3.2 Transport 90 (4)
2.3.3 Magnetic characterization 94 (19)
3 Progress in Si-based Spintronics 113(26)
3.1 Dilute doped Mn in Si 113(5)
3.1.1 Early experiments 114(1)
3.1.2 Substitutional Mn in Si supercells 115(3)
3.2 Si-based digital ferromagnetic 118(7)
heterostructure
3.2.1 Perfect δ-layer 119(3)
3.2.2 Defect models 122(3)
3.3 Single doping of Fe and Mn in Si 125(4)
3.4 Trilayers 129(4)
3.5 MnSi Clusters 133(6)
3.5.1 Growth of MnSi 133(3)
3.5.2 Theoretical Studies of MnSix, x 136(3)
1.7
Bibliography 139(8)
Index 147