Paper Publications
Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric
Release time:2021-05-21 Hits:
Indexed by:Journal paper
Document Code:14
First Author:Xinyuan Zhao
Correspondence Author:Jingping Xu*,Wing-Man Tang
Co-author:Lu Liu,Pui-To Lai
Journal:Applied Physics Express
Included Journals:SCI
Affiliation of Author(s):华中科技大学
Place of Publication:日本
Discipline:Engineering
First-Level Discipline:Electronic Science And Technology
Funded by:国家自然科学基金
Document Type:J
Volume:12
Issue:6
Page Number:64005
Date of Publication:2019-06-05
Teaching and Research Group:光学与电子信息学院