Indexed by: Journal paper

First Author: Xingsheng Wang

Correspondence Author: Xingsheng Wang

Co-author: X. Wang, A.R. Brown, N. Idris, S. Markov, G. Roy,A. Asenov

Journal: IEEE Transactions on Electron Devices

Included Journals: EI、SCI

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 58

Issue: 8

Page Number: 2293–2301

Date of Publication: 2011-08-01

Abstract: This paper presents a comprehensive full-scale three-dimensional simulation scaling study of the statistical threshold-voltage variability in bulk high- k /metal gate (HKMG) MOSFETs with gate lengths of 35, 25, 18, and 13 nm. Metal gate granularity (MGG) and corresponding workfunction-induced threshold-voltage variability have become important sources of statistical variability in bulk HKMG MOSFETs. It is found that the number of metal grains covering the gate plays an important role in determining the shape of the threshold-voltage distribution and the magnitude of the threshold-voltage varia

Links to published journals: https://ieeexplore.ieee.org/document/5782949