·Paper Publications
- [41] Ya-Xiong Zhou, Yi Li,* Nian Duan, Zhuo-Rui Wang, Ke Lu, Miao-Miao Jin, Long Chen, Si-Yu Hu, Ting-Chang Chang, Hua-Jun Sun, Kan-Hao Xue and Xiang-Shui Miao,* Boolean and sequential logic in a one-memristor-one-resistor (1M1R) structure for in-memory computing, Advanced Electronic Materials, 5, 1800229, 2018..
- [42] Ke Lu, Yi Li,* Wei-fan He, Jia Chen, Ya-Xiong Zhou, Nian Duan, Hua-Jun Sun, Kan-Hao Xue, and Xiang-Shui Miao, Diverse spike-timing dependent plasticity based on multilevel HfOx memristor for neuromorphic computing. Applied Physics A., 124, 438, 2018..
- [43] Qi Lin, Yi Li, Ming Xu, Qu Cheng, Hang Qian, Jinlong Feng, Hao Tong,* Xiangshui Miao,* Dual-layer Selector with Excellent Performance for Cross-Point Memory Applications, IEEE Electron Device Letters, 39(4), 496-499, 2018..
- [44] Nian Liu, Peng Yan, Yi Li, Ke Lu, Huajun Sun*, Hongkai Ji, Kanhao Xue, and Xiangshui Miao, Conducting mechanism of Ag-diffused Bi-Te based resistive switching devices, Applied Physics A, 124, 143, 2018..
- [45] Yi Li, Yaxiong Zhou, Zhuorui Wang, Xiangshui Miao*, Memcomputing: fusion of memory and computing, SCIENCE CHINA Information Sciences, 61, 060424:1-3, 2018..
- [46] Yi Li*, Kangsheng Yin, Meiyun Zhang, Long Cheng, Ke Lu, Shibing Long*, Yaxiong Zhou, Zhuorui Wang, Kanhao Xue, Ming Liu, and Xiangshui Miao*, Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor, Applied Physics Letters, 111, 213505, 2017..
- [47] Long Cheng, Mei-Yun Zhang, Yi Li,* Ya-Xiong Zhou, Zhuo-Rui Wang, Si-Yu Hu, Shi-Bing Long,* Ming Liu and Xiang-Shui Miao, Reprogrammable logic in memristive crossbar for in-memory computing, Journal of Physics D: Applied Physics. 50, 505102, 2017..
- [48] Ya-Xiong Zhou,† Yi Li,† Yu-Ting Su, Zhuo-Rui Wang, Ling-Yi Shih, Ting-Chang Chang,* Kuan-Chang Chang, Shi-Bing Long, Simon M. Sze, and Xiang-Shui Miao,* Nonvolatile reconfigurable sequential logic in HfO2 resistive random access memory array, Nanoscale, 9, 6649-6657, 2017. (Inside front cover).
- [49] Yang Zhang, Yi Li,* Xiaoping Wang,* and Eby G. Friedman, Synaptic Characteristics of Ag/AgInSbTe/Ta-Based Memristor for Pattern Recognition Applications, IEEE Transactions on Electron Devices, 64(4), 1806-1811, 2017..
- [50] Zhuo-Rui Wang,† Yu-Ting Su,† Yi Li,† Ya-Xiong Zhou, Tian-Jian Chu, Kuan-Chang Chang, Ting-Chang Chang,* Tsung-Ming Tsai, Simon M. Sze, and Xiang-Shui Miao,* Functionally complete Boolean logic in 1T1R resistive random access memory, IEEE Electron Device Letters, 38(2), 1-4, 2017..