·Paper Publications
李祎，缪向水，基于忆阻器的存储与计算融合理论与实现，国防科技，第37卷，第6期，17-22，2016年12月。
Release time:2020-11-30 Hits:
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J. J. Zhang, H. Liu, H. J. Sun*, P. Yan,Y. Li, S. J. Zhong, S. Xie, R. J. Li, and X. S. Miao, Charged defects-induced resistive switching in Sb2Te3memristor, Journal of Electronic Materials, 45(2), 1154-1159 (2016).
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J. T. Yu, Y. Li, X. M. Mu, J. J. Zhang, X. S. Miao, and S. N. Wang*, Modeling the AgInSbTe memristor, Radioengineering, 24(3), 808-813 (2015).