J. T. Yu, Y. Li, X. M. Mu, J. J. Zhang, X. S. Miao, and S. N. Wang*, Modeling the AgInSbTe memristor, Radioengineering, 24(3), 808-813 (2015).
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Pre One:Y. X. Zhou, Y. Li, L. Xu, S. J. Zhong, R. G. Xu, and X. S. Miao*, A hybrid memristor-CMOS XOR gate for nonvolatile logic computation, Physica Status Solidi A: Applications and Materials Science, 213(4), 1050-1054 (2016).
Next One:P. Yan, Y. Li, Y. J. Hui, S. J. Zhong, Y. X. Zhou, L. Xu, N. Liu, H. Qian, H. J. Sun*, X. S. Miao, Conducting mechanism of forming-free TiW/Cu2O/Cu memristive devices, Applied Physics Letters, 107, 083501 (2015).