学历：

2010-2014中国地质大学（武汉）大学工学学士，电子信息工程专业

2014-2020厦门大学工学博士，电子科学与技术专业

2017-2019 东京大学联合培养博士，电子科学与技术专业

研究方向：

半导体激光器、面发射激光器、GaN基发光器件、激子极化激元器件

主讲课程：

学术兼职：

成果奖励：

课题项目：

GaN基垂直腔面发射激光器基础研究，国家自然科学基金（重点）项目，2016-2018 主要参与

代表作：（请勿用自动排序）

[1] Y. Mei et al. Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’. Light: Science & Applications, 2017, 6 (1); e16199-e16199.

[2] Y. Mei et al. Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet. Applied Physics Letter, 2017, 111 (12); 121107.

[3] Y. Mei et al. A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures. Semiconductor Science and Technology, 2017, 33 (1); 015016.

[4] Y. Mei et al. Room temperature continuous wave lasing of GaN-based green vertical-cavity surface-emitting lasers. Gallium Nitride Materials and Devices XIV, International Society for Optics and Photonics: 2019; p 109181H.

[5] R. Xu, Y. Mei et al. Effects of lateral optical confinement in GaN VCSELs with double dielectric DBRs. IEEE Photonics Journal, 2020, 12 (2); 1-8.

[6] H. Xu, Y. Mei et al. Green VCSELs Based on Nitride Semiconductor. Japanese Journal of Applied Physics, 2020.

[7] R. Xu, Y. Mei et al. Green Vertical-Cavity Surface-Emitting Lasers Based on Combination of Blue-Emitting Quantum Wells and Cavity-Enhanced Recombination. IEEE Transactions on Electron Devices, 2018, 65 (10); 4401-4406.

[8] R. Xu, Y. Mei et al. Simultaneous blue and green lasing of GaN-based vertical-cavity surface- emitting lasers. Semiconductor Science and Technology, 2017, 32 (10); 105012.