代表性文章或专著
1.Controllable Growth of 2H-1 T′MoS2/ReS2 Heterostructures via Chemical Vapor Deposition, Applied Surface Science, 2022, 572, 151438.
2.Enhanced Valley Splitting in Monolayer WSe2 by Phase Engineering，ACS Nano, 2021, 15, 8244−8251.
3.Review of Anisotropic 2D Materials: Controlled Growth, Optical Anisotropy Modulation, and Photonic Applications, LASER & PHOTONICS REVIEWS, 2021, 15, 2100322.
4.Enhancement of Room-Temperature Photoluminescence and Valley Polarization of Monolayer and Bilayer WS2 via Chiral Plasmonic Coupling, ACS Appl. Mater. Interfaces, 2021, 13, 35097−35104.
5.Facile Synthesis of Two-Dimensional MoS2/WS2 Lateral Heterostructures with Controllable Core/Shell Size Ratio by A One-Step Chemical Vapor Deposition Method, SCIENCE CHINA Physics, Mechanics & Astronomy, 2021, 10, 103711.
6.Controllable Enormous Valley Splitting in Janus WSSe on CrN Monolayer, Journal of Physics D: Applied Physics, 2021, 54, 425304.
7.Enormous Valley Splitting in Monolayer WS2 by Coupling with an N-Terminated GaN Substrate, Physica Status Solidi-Rapid Research Letters, 2021, 15, 2000493.
8.Room-Temperature Spin Injection and Optical Polarization in Nitride-Based Blue and Ultra-Violet Spin Light-Emitting Diodes, Applied Physics Express, 2020, 13(12)：0-123001.
9.Strain Manipulation of the Polarized Optical Response in Two-dimensional GaSe Layers, Nanoscale, 2020, 12(6): 4069-4076.
10.Modulating Room Temperature Spin Injection into GaN Towards the High-Efficiency Spin-Light Emitting Diodes, Applied Physics Express, 2020, 13: 043006.
11.Identically Sized Co Quantum Dots on Monolayer WS2 Featuring Ohmic Contact, Physical Review Applied, 2020, 13(2): 024003.
12.Modulation of Spin-Valley Splitting in Two-Dimensional MnPSe3/CrBr3 van der Waals Heterostructure, Journal of Physics D: Applied Physic, 2020, 53(12): 125104.
13.Deeply Exploring Anisotropic Evolution Towards Large-Scale Growth of Monolayer ReS2, ACS Applied Materials & Interfaces, 2019, 12(2): 2862-2870.
14.Polarization-Controllable Plasmonic Enhancement on the Optical Response of Two-Dimensional GaSe Layers, ACS Applied Materials & Interfaces, 2019, 11(21): 19631-19637.
15.Large and Controllable Spin-Valley Splitting in Two-Dimensional WS2/h-VN Heterostructure, Physical Review B, 2019, 100(19): 195435.
16.Regulating the Circular Polarization in Nitride-Based Light-Emitting Diodes Through the Spin Injection, Applied Physics Express, 2019, 12(12): 123005-123005.
17.Hydrothermally Stable ZnAl2O4 Nanocrystals with Controlled Surface Structures for the Design of Long-Lastin and Highly Active/Selective PdZn Catalysts, Green Chemistry, 2019, 21(24): 6574-6578.
18.Plasmon-Enhanced Exciton Emissions and Raman Scattering of CVD-Grown Monolayer WS2 on Ag Nanoprism Arrays, Applied Surface Science, 2019, 504: 144252.
19.Improved Open-Circuit Voltage and Repeatability of Perovskite Cells Based on Double-Layer Lead Halide Precursors Fabricated by a Vapor-Assisted Method , ACS Applied Materials & Interfaces, 2019, 11(27): 24132-24139.
20.Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices , ACS Applied Materials & Interfaces, 2019, 11(21): 19381-19387.
21.Elect rically Controllable Magnetic Properties of Fe-doped GaSe Monolayer , Journal of Physics D: Applied Physics, 2019, 52(17): 175001.
22.Modification of the Electronic and Spintronic Properties of Monolayer GaGeTe with a Vertical Electric Field , Journal of Physics D: Applied Physics, 2019, 52(11): 115101.
23.Stress Engineering on the Electronic and Spintronic Properties for a GaSe/HfSe2 van der Waals Heterostructure , Applied Physics Express, 2019, 12(3): 031002.
24.In-plane Anisotropy of Quantum Transport in Artificial Two dimensional Au Lattices, Nano Letters, 2018, 18(3): 1724-1732.
25.Enhanced Photocatalytic Efficiency of ZnO/ZnSe Coaxial Nanowires through Interfacial Strain Modification, Physica E:Low-Dimensional Systems & Nanostructures, 2018, 103: 430-434.
26.Manipulation of Perpendicular Magnetic Anisotropy of Single Fe Atom Adsorbed Graphene via MgO(111) Substrate, Journal of Physics D: Applied Physics, 2018, 51(20): 205001.
27.Tuning the Electronic, Optical, and Magnetic Properties of Monolayer GaSe with a Vertical Electric Field, Physical Review Applied, 2018, 9(4): 044029.
28.Electrically Tunable Magnetic Configuration on Vacancy-Doped GaSe Monolayer, Physics Letters A, 2018, 382(9): 667-672.
29.Strong Anti-Strain Capacity of CoFeB/MgO Interface on Electronic Structure and State Coupling, Chinese Physics B, 2018, 27(1): 017502.
30.Effect of External Strain on the Charge Transfer: Adsorption of Gas Molecules on Monolayer GaSe , Materials Chemistry and Physics, 2017, 198: 49-56.
31.Modification of Spin Electronic Properties of Fe-n/GaSe Monolayer Adsorption System, Acta Physcia Sinica, 2017, 66(16): 166301.
32.Effects of Interlayer Polarization Field on the Band Structures of the WS2/MoS2 and WSe2/MoSe2 Heterostructures , Surface Science,
33.Modulation of Electronic and Optical Anisotropy Properties of ML-GaS by Vertical Electric Field, Nanoscale Research Letters, 2017, 12: 409.
34.Nonuniform Effect of Carrier Separation Efficiency and Light Absorption in Type-II Perovskite Nanowire Solar Cells , Nanoscale Research Letters, 2017, 12: 160.
35.Effect of Surface Morphology and Magnetic Impurities on the Electronic Structure in Cobalt-Doped BaFe2As2 Superconductors , Nano Letters, 2017, 17(3): 1642-1647.
36.Magnetic Modification of GaSe Monolayer by Absorption of Single Fe Atom, RSC Advanced, 2017, 7(8): 4285-4290.
37.Enhanced Magneto-Optical Effects in Composite Coaxial Nanowires Embedded with Ag Nanoparticles, Scientific Reports, 2016, 6: 29170.
38.Doping Behaviors of Adatoms Adsorbed on Phosphorene , Physica Status Solidi B-Basic Solid State Physics, 2016, 253(6): 1156-1166.
39.Effects of Nitrogen Dopants on the Atomic Step Kinetics and Electronic Structures of O-polar ZnO , Nanoscale, 2016, 8(7): 4381-4386.
40.Evolution of Band Structures in MoS2-Based Homo- and Heterobilayers, Journal of Physics D: Applied Physics, 2016, 49(6): 065304.
41.Effects of Thermally-Induced Changes of Cu Grains on Domain Structure and Electrical Performance of CVD-Grown Graphene, Nanoscale, 2016, 8(2): 930-937.
42.Electro-optic Coefficient Enhancement of AlxGa1-xN via Multiple Field Modulations, ACS Applied Materials & Interfaces, 2015, 7(32): 17707-17712.
43.Theoretical Study of the Interaction of Electron Donor and Acceptor Molecules with Monolayer WS2, Journal of Physics D: Applied Physics, 2015, 48(28): 285303.
44.Au and Ti induced Charge Redistributions on Monolayer WS2 , Chinese Physics B, 2015, 24(7): 77301.
45.Direct Synthesis of Graphene 3D-Coated Cu Nanosilks Network for Antioxidant Transparent Conducting Electrode, Nanoscale, 2015, 7(24): 10613-10621.
46.Effect of Boron in Fe/MgO Interface on Structural Stability and State Coupling, Computational Materials Science, 2015, 101: 138-142.
47.Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7x7) Surface , Nano-Micro Letters, 2015, 7(2): 194-202.
48.Metal-Atom-Induced Charge Redistributions and Their Effects on the Electrical Contacts to WS2 Monolayers, Physica Status Solidi B-Basic Solid State Physics, 2015, 252: 1783-1791.
49.First-Principles Calculations of Perpendicular Magnetic Anisotropy in Fe1-xCox/MgO(001) Thin Films , Nanoscale Research Letters, 2015, 10: 126.
50.Two-Dimensional Au Lattices Featuring Unique Carrier Transport Preference and Wide Forbidden Gap , Nanoscale, 2014, 6(17): 10118-10125.
51.Selective Surface Functionalization at Regions of High Local Curvature in Graphene, Chemical Communications, 2013, 49(7): 677-679.
52.Crystal Structure Evolution of Individual Graphene Islands During CVD Growth on Copper Foil, Advanced Materials, 2013, 25(46): 6744-6751.
53.Tuning the Doping Type and Level of Graphene with Different Gold Configurations, Small, 2012, 8(20): 3129-3136.
54.Growth Mechanism and Controlled Synthesis of AB-Stacked Bilayer Graphene on Cu-Ni Alloy Foils , ACS Nano, 2012, 6(9): 7731-7738.
55.Toward the Controlled Synthesis of Hexagonal Boron Nitride Films, ACS Nano, 2012, 6(7): 6378-6385.
56.Selective-Area Fluorination of Graphene with Fluoropolymer and Laser Irradiation, Nano Letters, 2012, 12(5): 2374-2378.
57.Detection of Sulfur Dioxide Gas with Graphene Field Effect Transistor, Applied Physics Letters, 2012, 100(16): 163114.
58.Low-Temperature Chemical Vapor Deposition Growth of Graphene from Toluene on Electropolished Copper foils, ACS Nano, 2012, 6(3): 2471-2476.
59.Highly Conductive and Porous Activated Reduced Graphene Oxide Films for High-Power Supercapacitors, Nano Letters, 2012, 12(4): 1806-1812.
60.van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene, Nano Letters, 2012, 12(3): 1431-1436.
61.An Improved Method for Transferring Graphene Grown by Chemical Vapor Deposition, Nano, 2012, 7(1): 1150001.
62.Graphene Growth Using a Solid Carbon Feedstock and Hydrogen , ACS Nano, 2011, 5(9): 7656-7661.
63.Synthesis and Characterization of Large-Area Graphene and Graphite Films on Commercial Cu-Ni Alloy Foils, Nano Letters, 2011, 11(9): 3519-3525.
代表性专利
1.一种全电学调控的自旋发光探测一体器件及其制备方法, 专利号201810540087.X.
2.一种电场调控的二维自旋电子器件及其制备方法, 专利号201810559006.0.
3.一种管式CVD炉用接头、二维材料及其生长装置和方法, 专利号 201810541023.1.
4.一种具有电场可调极化率的二维旋光器件, 专利号 201820922881.6.
5.一种具有可控极化率的二维自旋电子器件, 专利号 201820923579. 2.
6.矢量强磁场下分子束外延及其原位表征装置，专利号201611236161.6
7.一种产生可控极化率的自旋电流的结构与方法, 专利号201810540985.5
8.一种产生具有电场可调极化率的旋光的结构与方法, 专利号201810541755.0
9.一种极化率可控的可变波长二维旋光器件及其制备方法，专利号201810558544.8
10.一种电可调的各向异性隧穿磁阻结构, 专利号201921002454.7
11.一种电可控的二维自旋电子器件阵列，专利号201920997049.7
12.一种电控二维自旋过滤器件，专利号201920995707.9
13.一种基于自旋注入的电控自旋发光二极管器件，专利号201920995759.6
14.一种具有电场可控极化率的旋光发光二极管器件，专利号201920997067.5
15.一种具有电控极化率的可变波长二维旋光器件，专利号201920995783.X
16.一种柔性二维磁存储阵列，专利号201920997044.4
