2003至今，厦门大学物理系，工程师；
2009-2012，厦门大学物理系，工程硕士；
1999-2003，厦门大学物理系，学士。

[1] J. C. Li, W. H. Yang, S. P. Li, H. Y. Chen, D. Y. Liu, and J. Y. Kang, “Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-d-codoped AlxGa1-xN/AlyGa1-yN superlattices”, Applied Physics Letters, 95, 151113-1-151113-3, October, 2009.
[2] P. Chen, X. G. Tu, S. P. Li, J. C. Li, W. Lin, H. Y. Chen, D. Y. Liu, J. Y. Kang, Y. H. Zuo, L. Zhao, S. W. Chen, Y. D. Yu, J. Z. Yu, and Q. M. Wang, “Enhanced Pockels effect in GaN/AlxGa1−xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer”, Applied Physics Letters, 91 (3), 031103-1-031103-3, July, 2007.
[3]D. J. Cai, F. C. Xu, J. C. Li, H. Y. Chen, and J. Y. Kang, “Non-contact electrical detection of intrinsic local charge and internal electric field at nanointerfaces”, Nanotechnology, 21, 015707-1-015707-6, January, 2010.
[4]J. C. Li, W. Lin, W. H. Yang, W. Z. Cai, Q. F. Pan, X. J. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, J. F. Cai, X. Yu, and J. Y. Kang, “Design and epitaxy of structural III-nitrides”, Journal of Crystal Growth, 311(3), 478-481, January, 2009.
[5]S. P. Li, Z. L. Fang, H. Y. Chen, J. C. Li, X. H. Chen, X. L. Yuan, S. Takashi, Q. M. Wang, and J. Y. Kang, “Defect influence on luminescence efficiency of GaN-based LEDs”, Materials science in semiconductor processing, 9 (1-3), 371-374, March, 2006.
发明专利：选择超晶格位置掺杂的p型III族氮化物材料的制备方法．
专利号：200810071176.0
发明人：康俊勇，李金钗，李书平，杨伟煌，陈航洋，刘达艺

1、深紫外LED外延生长及应用技术研究 （“十二五”863重大项目，2011-2013，参与）
2、铁磁岛纳米晶格中的人工几何磁阻挫（ 国家自然科学基金面上项目，2010-2012，参与）

主要负责金属有机物化学气相沉积系统（MOCVD）及其附属子设备的相关实验技术设计工作