代表性文章或专著
•1. P. Li, H. Li, Y. Yao, N. Li, M. Wong, M. Iza, M. Gordon, J. Speak, S. Nakamura, S. P. DenBaars, “Significant quantum efficiency enhancement of InGaN red micro-light-emitting diodes with a peak external quantum efficiency of up to 6%” ACS Photonics 2023, 10, 6, 1899–1905
•2. P. Li, H. Zhang, H. Li, T. Cohen, R. Anderson1, M. S. Wong1, E. Trageser1,Y. Chow, M. D. Vries, S. Nakamura, S. P. DenBaars, “Demonstration of yellow (568nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells” Appl. Phys. Lett. 121, 071103 (2022)
•3. P. Li, Y. Yao, H. Zhang, C. Lynsky, K. S. Qwah, H. Li, J. Speck, S. Nakamura, S. P. DenBaars, “Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact,” Appl. Phys. Lett. 120, 121102 (2022)
•4. P. Li, H. Li, Y. Yang, H. Zhang, P. Shapturenka, M. Wong, C. Lynsky, M. Iza, M. J. Gordon, J. Speck, S. Nakamura, S. P. DenBaars, “Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%,” Appl. Phys. Lett. 120, 041102 (2022). (Featured on the cover of APL, Covered by Nature Photonics)
•5. P. Li, Y. Yao, H. Zhang, C. Lynsky, K. S. Qwah, H. Li, J. Speck, S. Nakamura, S. P. DenBaars, “Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control,” Appl. Phys. Lett., 118, 261104, 2021. (Feature Article and Scilight of APL)
•6. P. Li, H. Li, Y. Yao, H. Zhang, C. Lynsky, K. S. Qwah, J. Speck, S. Nakamura, S. P. DenBaars, “Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control,” Optics Express 29, 22001-22007, 2021.
•7. P. Li, H. Zhang, M. Iza, H. Li, J. Speck, S. Nakamura, S. P. DenBaars, “Optimization of efficient metalorganic chemical vapor deposition grown TJs for InGaN light-emitting diodes: epitaxy design and light extraction simulation,” Semiconductor Science and Technology, 36 035019, 2021.
•8. P. Li, H. Zhang, H. Li, Y. Zhang. Y. Yao, N. Palmquist, M. Iza, J. Speck, S. Nakamura, S. P. DenBaars, “Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage,” Semiconductor Science and Technology, 35 125023, 2020. (Covered by Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/nov/ucsb-121120.shtml)
•9. P. Li, H. Zhang, H. Li, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Sspeck, S. Nakamura, S. P. DenBaars “Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition,” Optics Express, 28, 18707, 2020. (Covered by Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/jul/ucsb-160720.shtml)
•10. H. Li, H. Zhang, J. Song, P. Li, S. Nakamura, S. P. DenBaars, “Toward heteroepitaxially grown semipolar GaN laser diodes under electrically-injected continuous-wave mode: from materials to lasers,” Applied Physics Review, 7, 041318, 2020.
•11. H. Zhang, P. Li, H. Li, S. Nakamura, S. P. DenBaars, “Electrically driven, highly polarized monolithic white semipolar (20-21) InGaN micro-light-emitting diodes with surface plasmon coupled indium tin oxide gratings,” Appl. Phys. Lett., 117, 181105, 2020.
•12. H. Zhang, H. Li, P. Li, J. Song, J. S. Speck, S. Nakamura, S. P. DenBaars, “Room-temperature continuous-wave electrically driven semipolar (20-21) blue laser diodes heteroepitaxially grown on sapphire substrate,” ACS Photonics, 7, 1662, 2020. (Corresponding author). (Covered by Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/aug/ucsb-060820.shtml)
