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卢卫芳

副教授 \ 博士生导师

weilu.weif@xmu.edu.cn

物理大楼 221室

个人主页:https://orcid.org/0000-0001-6214-4024

研究领域 MOCVD选区外延,Micro/Nano-LED材料与器件, 宽禁带半导体材料新型结构与应用等

教育和工作经历
2022—至今:厦门大学,物理科学与技术学院物理学系,副教授/博导
2018-2021: 日本名城大学,材料科学与工程系,博士后
2014-2017: 丹麦技术大学,光电工程系,博士
2011-2014: 厦门大学,物理与机电工程学院物理学系,硕士
2007-2011: 厦门大学,物理与机电工程学院物理学系,学士
代表性文章或专著
[1]. Yan, J., Inaba, S., Lu, W.*, Bao, Y., Sun, Y., Li, J., Iwaya, M., Huang, K.,* Kang, J., Takeuchi, T., Zhang, R., & Kamiyama, S., “Characterizations and Modeling of Grown MQS Nanowires with GaInN/GaN Superlattice Structures”, Crystal Growth & Design 25, 639−649 (2025)
[2].    Katsuro, S., Lu, W.*, Ito, K., Nakayama, N., Inaba, S., Shima, A., Yamamura, S., Jinno, Y., Sone, N., Huang, K., Iwaya, M., Takeuchi, T. & Kamiyama, S., “Dimension dependence of current injection path in GaInN/GaN multi-quantum-shell (MQS) nanowire-based light-emitting diode arrays”, Nanophotonics 12(15), 3077-3087 (2023)
[3]. Katsuro, S., Lu, W.*, Ito, K., Nakayama, N., Yamamura, S., Jinno, Y., Inaba, S., Shima, A., Sone, N., Han, D.P., Huang, K., Iwaya, M., Takeuchi, T. & Kamiyama, S., “Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs”, Nanophotonics 11(21): 4793–4804 (2022)
[4].    Inaba, S., Lu, W.*, Ito, K., Katsuro, S., Nakayama, N., Shima, A., Jinno, Y., Yamamura, S., Sone, N., Huang, K. and Iwaya, M., Takeuchi, T. & Kamiyama, S., “Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs”, ACS Applied Materials & Interfaces 14, 50343−50353 (2022)
[5].    Lu, W.*, Nakayama, N., Ito, K., Katsuro, S., Sone, N., Miyamoto, Y., Okuno, K., Iwaya, M., Takeuchi, T., Kamiyama, S. & Akasaki, I., “Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires”, ACS Applied Materials & Interfaces 13, 45, 54486–54496 (2021)
[6].    Miyamoto, Y.#, Lu, W.#*, Sone, N., Okuda, R., Ito, K., Okuno, K., Mizutani, K., Iida, K., Ohya, M., Iwaya, M. and Takeuchi, T., Kamiyama, S. & Akasaki, I., “Crystal growth and characterization of n-GaN in a multiple quantum shell nanowire-based light emitter with a tunnel junction”, ACS Applied Materials & Interfaces 13, 37883−37892 (2021)
[7].    Katsuro, S.#, Lu, W.#*, Ito, K., Nakayama, N., Sone, N., Okuno, K., Iwaya, M., Takeuchi, T., Kamiyama, S. & Akasaki, I., “Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions”, Nanophotonics 10(13): 3441–345 (2021)
[8].    Cheng Z.#, Lu W.#*, Shi J.#, Tanaka D., Protik N.H., Wang S., Iwaya M., Takeuchi T., Kamiyama S., Akasaki I., Amano H. & Graham, S.*, "Quasi-Ballistic Thermal Conduction in 6H-SiC", Materials Today Physics 20, 100462 (2021)
[9].    Lu, W.*, Miyamoto, Y., Okuda, R., Ito, K., Sone, N., Iwaya, M., Takeuchi, T., Kamiyama, S. & Akasaki, I., “Correlation between optical and structural characteristics in coaxial GaInN/GaN multiple quantum shell nanowires with AlGaN spacers”, ACS Applied Materials & Interfaces 12, 51082-51091(2020)
[10].    Lu, W.*, Ito, K., Sone, N., Okuda, R., Miyamoto, Y., Iwaya, M., Takeuchi, T., Kamiyama, S. & Akasaki, I., “Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures”, Applied Surface Science 539, 148279 (2021)
[11].    Lu, W.*, Sone, N., Goto, N., Iida, K., Suzuki, A., Han, D.P., Iwaya, M., Tekeuchi, T., Kamiyama, S. & Akasaki, I., “Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires”, Nanoscale 11, 18746-18757 (2019).
[12].Tarekegne, A.T., Kaltenecker, K.J., Klarskov, P., Iwaszczuk, K., Lu, W., Ou, H., Norrman, K. & Jepsen, P.U.*, “Sub-cycle nonlinear response of doped 4H silicon carbide revealed by two-dimensional terahertz spectroscopy”, ACS Photonics 7, 221-231 (2020)
[13].    Kamiyama, S.*, Lu, W., Iwaya, M., Takeuchi, T. & Akasaki, I., “Growth and characterization of core-shell structures consisting of GaN nanowire core and GaInN/GaN multi-quantum shell”, ECS journal of Solid State Science and Technology 9, 015007 (Focus issue: Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A tribute to Prof. Akasaki) (2020)
[14]. Wang, J.*, Cai, W., Lu, W., Lu, S., Kano, E., Agulto, V.C., Sarkar, B., Watanabe, H., Ikarashi, N., Iwamoto, T., Nakajima, M., Honda, Y. & Amano, H*. “Observation of 2D-magnesium-intercalated gallium nitride superlattices”, Nature 631, 67–72 (2024)
[1]. 日本授权专利:半導体発光素子および半導体発光素子の製造方法”, JP7520305B2, 2024-07-23; PCT-WO2020045206A1, 2022-03-03.
[2]. 日本授权专利:半導体発光素子および半導体発光素子の製造方法”, JP7336767B2, 2023-09-01.
[3]. 美国授权专利:Semiconductor light emitting device and manufacturing method of semiconductor light emitting device”, US11462659B2, 2022-10-04.
[4]. 中国授权专利:一种Ge组分及带宽可调控的SiGe纳米带的制备方法 , CN03441062B, 2016-9-28
科研基金及项目
1.    科技部国家重点研发计划“新型显示与战略性电子材料”重点专项项目, 课题负责人
2.    科技部国家重点研发计划“新型显示与战略性电子材料”青年项目,项目骨干
3.    福建省引进高层次创业创新人才“百人计划”项目,主持
4.    国家自然科学基金青年项目,主持
5.    厦门大学校长基金,2023.01-2025.12,主持
6.    厦门大学南强青年拔尖人才计划(B类)
招生方向
微电子与固体电子学、材料工程、光电信息工程等
姓名 卢卫芳 职称职务 副教授 \ 博士生导师
邮箱 weilu.weif@xmu.edu.cn 办公室 物理大楼 221室
电话 个人主页 https://orcid.org/0000-0001-6214-4024
其他信息 研究方向岗位职责 MOCVD选区外延,Micro/Nano-LED材料与器件, 宽禁带半导体材料新型结构与应用等
教育和工作经历 2022—至今:厦门大学,物理科学与技术学院物理学系,副教授/博导
2018-2021: 日本名城大学,材料科学与工程系,博士后
2014-2017: 丹麦技术大学,光电工程系,博士
2011-2014: 厦门大学,物理与机电工程学院物理学系,硕士
2007-2011: 厦门大学,物理与机电工程学院物理学系,学士
代表性文章或专著 [1]. Yan, J., Inaba, S., Lu, W.*, Bao, Y., Sun, Y., Li, J., Iwaya, M., Huang, K.,* Kang, J., Takeuchi, T., Zhang, R., & Kamiyama, S., “Characterizations and Modeling of Grown MQS Nanowires with GaInN/GaN Superlattice Structures”, Crystal Growth & Design 25, 639−649 (2025)
[2].    Katsuro, S., Lu, W.*, Ito, K., Nakayama, N., Inaba, S., Shima, A., Yamamura, S., Jinno, Y., Sone, N., Huang, K., Iwaya, M., Takeuchi, T. & Kamiyama, S., “Dimension dependence of current injection path in GaInN/GaN multi-quantum-shell (MQS) nanowire-based light-emitting diode arrays”, Nanophotonics 12(15), 3077-3087 (2023)
[3]. Katsuro, S., Lu, W.*, Ito, K., Nakayama, N., Yamamura, S., Jinno, Y., Inaba, S., Shima, A., Sone, N., Han, D.P., Huang, K., Iwaya, M., Takeuchi, T. & Kamiyama, S., “Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs”, Nanophotonics 11(21): 4793–4804 (2022)
[4].    Inaba, S., Lu, W.*, Ito, K., Katsuro, S., Nakayama, N., Shima, A., Jinno, Y., Yamamura, S., Sone, N., Huang, K. and Iwaya, M., Takeuchi, T. & Kamiyama, S., “Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs”, ACS Applied Materials & Interfaces 14, 50343−50353 (2022)
[5].    Lu, W.*, Nakayama, N., Ito, K., Katsuro, S., Sone, N., Miyamoto, Y., Okuno, K., Iwaya, M., Takeuchi, T., Kamiyama, S. & Akasaki, I., “Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires”, ACS Applied Materials & Interfaces 13, 45, 54486–54496 (2021)
[6].    Miyamoto, Y.#, Lu, W.#*, Sone, N., Okuda, R., Ito, K., Okuno, K., Mizutani, K., Iida, K., Ohya, M., Iwaya, M. and Takeuchi, T., Kamiyama, S. & Akasaki, I., “Crystal growth and characterization of n-GaN in a multiple quantum shell nanowire-based light emitter with a tunnel junction”, ACS Applied Materials & Interfaces 13, 37883−37892 (2021)
[7].    Katsuro, S.#, Lu, W.#*, Ito, K., Nakayama, N., Sone, N., Okuno, K., Iwaya, M., Takeuchi, T., Kamiyama, S. & Akasaki, I., “Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions”, Nanophotonics 10(13): 3441–345 (2021)
[8].    Cheng Z.#, Lu W.#*, Shi J.#, Tanaka D., Protik N.H., Wang S., Iwaya M., Takeuchi T., Kamiyama S., Akasaki I., Amano H. & Graham, S.*, "Quasi-Ballistic Thermal Conduction in 6H-SiC", Materials Today Physics 20, 100462 (2021)
[9].    Lu, W.*, Miyamoto, Y., Okuda, R., Ito, K., Sone, N., Iwaya, M., Takeuchi, T., Kamiyama, S. & Akasaki, I., “Correlation between optical and structural characteristics in coaxial GaInN/GaN multiple quantum shell nanowires with AlGaN spacers”, ACS Applied Materials & Interfaces 12, 51082-51091(2020)
[10].    Lu, W.*, Ito, K., Sone, N., Okuda, R., Miyamoto, Y., Iwaya, M., Takeuchi, T., Kamiyama, S. & Akasaki, I., “Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures”, Applied Surface Science 539, 148279 (2021)
[11].    Lu, W.*, Sone, N., Goto, N., Iida, K., Suzuki, A., Han, D.P., Iwaya, M., Tekeuchi, T., Kamiyama, S. & Akasaki, I., “Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires”, Nanoscale 11, 18746-18757 (2019).
[12].Tarekegne, A.T., Kaltenecker, K.J., Klarskov, P., Iwaszczuk, K., Lu, W., Ou, H., Norrman, K. & Jepsen, P.U.*, “Sub-cycle nonlinear response of doped 4H silicon carbide revealed by two-dimensional terahertz spectroscopy”, ACS Photonics 7, 221-231 (2020)
[13].    Kamiyama, S.*, Lu, W., Iwaya, M., Takeuchi, T. & Akasaki, I., “Growth and characterization of core-shell structures consisting of GaN nanowire core and GaInN/GaN multi-quantum shell”, ECS journal of Solid State Science and Technology 9, 015007 (Focus issue: Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A tribute to Prof. Akasaki) (2020)
[14]. Wang, J.*, Cai, W., Lu, W., Lu, S., Kano, E., Agulto, V.C., Sarkar, B., Watanabe, H., Ikarashi, N., Iwamoto, T., Nakajima, M., Honda, Y. & Amano, H*. “Observation of 2D-magnesium-intercalated gallium nitride superlattices”, Nature 631, 67–72 (2024)
[1]. 日本授权专利:半導体発光素子および半導体発光素子の製造方法”, JP7520305B2, 2024-07-23; PCT-WO2020045206A1, 2022-03-03.
[2]. 日本授权专利:半導体発光素子および半導体発光素子の製造方法”, JP7336767B2, 2023-09-01.
[3]. 美国授权专利:Semiconductor light emitting device and manufacturing method of semiconductor light emitting device”, US11462659B2, 2022-10-04.
[4]. 中国授权专利:一种Ge组分及带宽可调控的SiGe纳米带的制备方法 , CN03441062B, 2016-9-28
科研基金及项目 1.    科技部国家重点研发计划“新型显示与战略性电子材料”重点专项项目, 课题负责人
2.    科技部国家重点研发计划“新型显示与战略性电子材料”青年项目,项目骨干
3.    福建省引进高层次创业创新人才“百人计划”项目,主持
4.    国家自然科学基金青年项目,主持
5.    厦门大学校长基金,2023.01-2025.12,主持
6.    厦门大学南强青年拔尖人才计划(B类)
任教课程
招生方向 微电子与固体电子学、材料工程、光电信息工程等 荣誉奖励