[内容简介]
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies.
Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
[目录]
Preface XV
List of Contributors XVII
Color Plates XXIII
Part One Scaling and Challenge of Si-based CMOS 1
1 Scaling and Limitation of Si-based CMOS 3
Gang He, Zhaoqi Sun, Mao Liu, and Lide Zhang
1.1 Introduction 3
1.2 Scaling and Limitation of CMOS 4
1.3 Toward Alternative Gate Stacks Technology 16
1.4 Improvements and Alternative to CMOS Technologies 22
1.4.1 Improvement to CMOS
1.5 Potential Technologies Beyond CMOS 23
1.6 Conclusions 24
References 25
Part Two High-k Deposition and Materials Characterization 31
2 Issues in High-k Gate Dielectrics and its Stack Interfaces 33
Hong-Liang Lu and David Wei Zhang
2.1 Introduction 33
2.2 High-k Dielectrics 33
2.3 Metal Gates 40
2.4 Integration of High-k Gate Dielectrics with Alternative Channel Materials 45
2.5 Summary 51
References 52
3 UV Engineering of High-k Thin Films 61
Ian W. Boyd
3.1 Introduction 61
3.2 Gas Discharge Generation of UV (Excimer) Radiation 61
3.3 Excimer Lamp Sources Based on Silent Discharges 63
3.4 Predeposition Surface Cleaning for High-k Layers 65
3.5 UV Photon Deposition of Ta2O5 Films 66
3.6 Photoinduced Deposition of Hf1-xSixOy Layers 70
3.7 Summary 73
References 73
4 Atomic Layer Deposition Process of Hf-Based High-k GateDielectric Film on Si Substrate 77
Tae Joo Park, Moonju Cho, Hyung-Suk Jung, and Cheol Seong Hwang
4.1 Introduction 77
4.2 Precursor Effect on the HfO2 Characteristics 78
4.3 Doped and Mixed High-k 97
4.4 Summary 105
References 105
5 Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications 111
Fu-Chien Chiu, Somnath Mondal, and Tung-Ming Pan
5.1 Introduction 111
5.2 Requirement of High-k Oxide Materials 114
5.3 Rare-Earth Oxide as Alternative Gate Dielectrics 117
5.4 Structural Characteristics of High-k RE Oxide Films 118
5.5 Electrical Characteristics of High-k RE Oxide Films 132
5.6 Conclusions and Perspectives 171
References 172
6 Hygroscopic Tolerance and Permittivity Enhancement of Lanthanum Oxide (La2O3 ) for High-k Gate Insulators 185
Yi Zhao
6.1 Introduction 185
6.2 Hygroscopic Phenomenon of La2O3 Films 186
6.3 Low Permittivity Phenomenon of La2O3 Films 191
6.4 Hygroscopic Tolerance Enhancement of La2O3 Films 194
6.5 Hygroscopic Tolerance Enhancement of La2O3 Films by Ultraviolet Ozone Treatment 198
6.6 Thermodynamic Analysis of Moisture Absorption Phenomenon in High-k Gate Dielectrics 203
6.7 Permittivity Enhancement of La2O3 Films by Phase Control 205
6.8 Summary 219
References 221
7 Characterization of High-k Dielectric Internal Structure by X-Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis 225
Elena O. Filatova, Andrey A. Sokolov, and Igor V. Kozhevnikov
7.1 Introduction 225
7.2 Chemical Bonding and Crystalline Structure of Transition Metal Dielectrics 227
7.3 NEXAFS Investigation of Internal Structure 229
7.4 Studying the Internal Structure of High-K Dielectric Films by Hard X-Ray Photoelectron Spectroscopy and TEM 236
7.5 Studying the Internal Structure of High-K Dielectric Films by X-ray Reflectometry 244
References 266
8 High-k Insulating Films on Semiconductors and Metals: General Trends in Electron Band Alignment 273
Valeri V. Afanasev, Michel Houssa, and Andre Stesmans
8.1 Introduction 273
8.2 Band Offsets and IPE Spectroscopy 274
8.3 Silicon/Insulator Band Offsets 277
8.4 Band Alignment at Interfaces of High-Mobility Semiconductors 280
8.5 Metal/Insulator Barriers 284
8.6 Conclusions 289
References 289
Part Three Challenge in Interface Engineering and Electrode 293
9 Interface Engineering in the High-k Dielectric Gate Stacks 295
Shijie Wang, Yuanping Feng, and Alfred C.H. Huan
9.1 Introduction 295
9.2 High-k Oxide/Si Interfaces 295
9.3 Metal Gate/High-k Dielectric Interfaces 303
9.4 Chemical Tuning of Band Alignments for Metal Gate/High-k Oxide Interfaces 308
9.5 Summary and Discussion 314
References 315
10 Interfacial Dipole Effects on High-k Gate Stacks 319
Li Qiang Zhu
10.1 Introduction 319
10.2 Metal Gate Consideration 321
10.3 Interfacial Dipole Effects in High-k Gate Stacks 324
10.4 Observation of the Interfacial Dipole in High-k Stacks 332
10.5 Summary 348
References 349
11 Metal Gate Electrode for Advanced CMOS Application 355
Wenwu Wang, Xiaolei Wang, and Kai Han
11.1 The Scaling and Improved Performance of MOSFET Devices 355
11.2 Urgent Issues about MOS Gate Materials for Sub-0.1 µm Device Gate Stack 360
11.3 New Requirements of MOS Gate Materials for Sub-0.1 µm Device Gate Stack 365
11.4 Summary 374
References 374
Part Four Development in non-Si-based CMOS technology 379
12 Metal Gate/High-k CMOS Evolution from Si to Ge Platform 381
Albert Achin
12.1 Introduction 381
12.2 High-k/Si CMOSFETs 386
12.3 High-k/Ge CMOSFETs 392
12.4 Ge Platform 397
12.5 Conclusions 401
References 402
13 TheoreticalProgressonGaAs(001)SurfaceandGaAs/high-k Interface 407
Weichao Wang, Ka Xiong, Robert M. Wallace, and Kyeongjae Cho
13.1 Introduction 407
13.2 Computational Method 409
13.3 GaAs Surface Oxidation and Passivation 409
13.4 Origin of Gap States at the High-k/GaAs Interface and Interface Passivation 419
13.5 Conclusions 428
References 428
14 III–V MOSFETs with ALD High-k Gate Dielectrics 433
Jack C. Lee and Han Zhao
14.1 Introduction 433
14.2 Surface Channel InGaAs MOSFETs with ALD Gate Oxides 436
14.3 Buried Channel InGaAs MOSFETs 450
14.4 Summary 460
References 466
Part Five High-k Application in Novel Devices
471
15 High-k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications 473
Xubing Lu
15.1 Introduction 473
15.2 Overview of High-k Dielectric Studies for FeFET Applications 477
15.3 Developing of HfTaO Buffer Layers for FeFET Applications 485
15.4 Summary 496
References 497
16 Rare-Earth Oxides as High-k Gate Dielectrics for Advanced Device Architectures 501
Pooi See Lee, Mei Yin Chan, and Peter Damarwan
16.1 Introduction 501
16.2 Key Challenges for High-k Dielectrics 502
16.3 Rare-Earth Oxides as High-k Dielectrics 506
16.4 High-k Dielectrics in Advanced Device Architecture 517
References 522
Part Six Challenge and Future Directions 531
17 The Interaction Challenges with Novel Materials in Developing High-Performance and Low-Leakage High-k/Metal Gate CMOS Transistors 533
Michael Chudzik, Siddarth Krishnan, Unoh Kwon, Mukesh Khare, Vijay Narayanan, Takashi Ando, Ed Cartier, Huiming Bu, and Vamsi Paruchuri
17.1 Introduction 533
17.2 Traditional CMOS Integration Processes 534
17.3 High-k /Metal Gate Integration Processes 536
17.4 Mobility 536
17.5 Metal Electrodes and Effective Work Function 541
17.6 Tinv Scaling and Impacts on Gate Leakage and Effective Work Function 544
17.7 Ambients and Oxygen Vacancy-Induced Modulation of Threshold Voltage 545
17.8 Reliability 547
17.9 Conclusions 550
References 551
Index 557