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CMOS Digital Integrated Circuits Analysis and Design( Fourth edition)
发布日期:2015-10-30  浏览

CMOS Digital Integrated Circuits Analysis and Design( Fourth edition)

[Book Description]

The fourth edition of CMOS Digital Integrated Circuits: Analysis and Design continues the well-established tradition of the earlier editions by offering the most comprehensive coverage of digital CMOS circuit design, as well as addressing state-of-the-art technology issues highlighted by the widespread use of nanometer-scale CMOS technologies. In this latest edition, virtually all chapters have been re-written, the transistor model equations and device parameters have been revised to reflect the sigificant changes that must be taken into account for new technology generations, and the material has been reinforced with up-to-date examples.

The broad-ranging coverage of this textbook starts with the fundamentals of CMOS process technology, and continues with MOS transistor models, basic CMOS gates, interconnect effects, dynamic circuits, memory circuits, arithmetic building blocks, clock and I/O circuits, low power design techniques, design for manufacturability and design for testability.

[Table of Contents]

Chapter 1 Introduction
  概论
  1.1 Historical Perspective
  发展历史
  1.2 Objective and Organization of the Book
  本书的目标和结构
  1.3 A Circuit Design Example
  电路设计举例
  1.4 Overview of VLSI Design Methodologies
  VLSI 设计方法综述
  1.5 VLSI Design Flow
  VLSI 设计流程
  1.6 Design Hierarchy
  设计分层
  1.7 Concepts of Regularity, Modularity, and Locality
  规范化、模块化和本地化的概念
  1.8 VLSI Design Styles
  VLSI 的设计风格
  1.9 Design Quality
  设计质量
  1.10 Packaging Technology
  封装技术
  1.11 Computer-Aided Design Technology
  计算机辅助设计技术
  Exercise Problems
  习题
Chapter 2 Fabrication of MOSFETs
  MOS 场效应管的制造
  2.1 Introduction
  概述
  2.2 Fabrication Process Flow: Basic Steps
  制造工艺的基本步骤
  2.3 The CMOS n-Well Process
  CMOS n 阱工艺 60
  2.4 Evolution of CMOS Technology
  CMOS 技术的发展 67
  2.5 Layout Design Rules
  版图设计规则 74
  2.6 Full-Custom Mask Layout Design
  全定制掩膜版图设计
  Exercise Problems
  习题
Chapter 3 MOS Transistor
  MOS 晶体管
  3.1 The Metal Oxide Semiconductor (MOS) Structure
  金属-氧化物-半导体 (MOS) 结构
  3.2 The MOS System Under External Bias
  外部偏置下的 MOS 系统
  3.3 Structure and Operation of the MOS Transistor (MOSFET)
  MOS 场效应管 (MOSFET) 的结构和作用
  3.4 MOSFET Current-Voltage Characteristics
  MOSFET 的电流-电压特性
  3.5 MOSFET Scaling and Small-Geometry Effects
  MOSFET 的收缩和小尺寸效应
  3.6 MOSFET Capacitances
  MOSFET 电容
  Exercise Problems
  习题
Chapter 4 Modeling of MOS Transistors Using SPICE
  用 SPICE 进行 MOS 管建模
  4.1 Introduction
  概述
  4.2 Basic Concepts
  基本概念 168
  4.3 The Level 1 Model Equations
  一级模型方程
  4.4 The Level 2 Model Equations
  二级模型方程
  ……
Chapter 5 MOS Inverters: Static Characteristics
  MOS 反相器的静态特性
Chapter 6 MOS Inverters: Switching Characteristics and Interconnect Effects
  MOS 反相器的开关特性和体效应
Chapter 7 Combinational MOS Logic Circuits
  组合 MOS 逻辑电路
Chapter 8 Sequential MOS Logic Circuits
  时序 MOS 逻辑电路
Chapter 9 Dynamic Logic Circuits
  动态逻辑电路
Chapter 10 Semiconductor Memories
  半导体存储器
Chapter 11 Low-Power CMOS Logic Circuits
  低功耗 CMOS 逻辑电路
Chapter 12 Arithmetic Building Blocks
  算术组合模块
Chapter 13 Clock and I/O Circuits
  时钟电路与输入输出电路
Chapter 14 Design for Manufacturability
  产品化设计
Chapter 15 Design for Testability
  可测试性设计
References
  参考文献
Index
  索引

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