基于电镜中心（EMC）FEI电镜数据，深圳大学物理与光电工程学院用户在JCR1区期刊Nano energy上发表论文，摘要如下：

Highly efficient and stable planar heterojunction solar cell based on sputtered and post-selenized Sb2Se3 thin film

Rong Tanga,1 , Zhuang-Hao Zhenga,b,1 , Zheng-Hua Sua,1 , Xue-Jin Lic , Ya-Dong Weia , Xiang-Hua Zhangb , Yong-Qing Fud , Jing-Ting Luoa , Ping Fana , Guang-Xing Lianga,b,∗

a Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, PR China b Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226, F-35000, Rennes, France c School of Science and Engineering, The Chinese University of Hong Kong (Shenzhen), Shenzhen, 518060, PR China d Faculty of Engineering and Environment, Northumbria University, Newcastle upon Tyne, NE1 8ST, UK

Antimony selenide (Sb2Se3) is regarded as one of the key alternative absorber materials for conventional thin film solar cells due to its excellent optical and electrical properties. Here, we proposed a Sb2Se3 thin film solar cell fabricated using a two-step process magnetron sputtering followed by a post-selenization treatment, which enabled us to optimize the best quality of both the Sb2Se3 thin film and the Sb2Se3/CdS heterojunction interface. By tuning the selenization parameters, a Sb2Se3 thin film solar cell with high efficiency of 6.06% was achieved, the highest reported power conversion efficiency of sputtered Sb2Se3 planar heterojunction solar cells. Moreover, our device presented an outstanding open circuit voltage (VOC) of 494 mV which is superior to those reported Sb2Se3 solar cells. State and density of defects showed that proper selenization temperature could effectively passivate deep defects for the films and thus improve the device performance.