郑有炓

基本简介

郑有炓，半导体材料与器件物理专家。1935年10月1日生于福建大田，1957年毕业于南京大学物理系，现任南京大学电子科学与工程学院教授，2003年当选为中国科学院院士。长期从事半导体异质结构材料与器件物理研究，近年主要致力于宽禁带半导体光电子材料与器件研究。首次观测到AlGaN/GaN异质结构二维电子气舒勃尼科夫-德哈斯效应（SdH）双周期振荡,揭示量子阱双子带占据和子能带间电子散射及高温下高阶子带电子输运散射机制；揭示压电极化和掺杂对二维电子气浓度和空间分布的影响规律；创新发展了基于极化诱导的AlGaN/GaN增强型MIS场效应器件、硅基AlGaN/GaN/AlGaN MSM紫外探测器和蓝宝石基光导型紫外探测器；提出压电调控的金属/铁电体/氮化物半导体的新型复合异质结构，开辟发展GaN-MFS器件新途径；创新发展了锗硅异质结构外延和高选择性GeSi/Si化学腐蚀技术；发现应变锗硅合金有序化新结构，提出有序结构新模型;创新发展了具有极高光电响应度的能隙阶梯缓变结构锗硅红外探测器；提出基于锗硅技术制备SiO2/Si量子限制的硅量子线及自限制氧化制备超精细硅量子线新方法；在II-VI/III-V族半导体复合结构研究上，取得系列创新成果，跻身于国际前列。与研究组已发表论文400余篇, 已被SCI收录332篇，EI收录428篇，被 SCI 论文引用1683篇（其中他引1409 篇），获得国家发明专利 31 项，首次观测到CdTe/InSb复合结构界面存在高迁移率二维电子气及二维电子气占据子带规律。研究成果获得国家自然科学奖二等奖1项、国家技术发明奖三等奖1项、江苏省科技进步奖一等奖1项、江苏省人才培养教学成果一等奖1项、教育部自然科学一等奖和技术发明一等奖各一项。还先后获得省部级科技进步奖8项以及国防科工委光华科技基金奖一等奖、国家863计划先进工作者一等奖。获江苏省优秀学科带头人、优秀研究生导师、优秀科技工作者和江苏省教育系统先进工作者等荣誉。

发表论文

61.Observation of a quasi-two-dimensional electron gas at an CdTe/InSb interface,Appl.Physics.Lett.,49(18),3,Nov.1986

2.Study of New ordered structure in GeSi/Si strained layer superlattices, Appl.Physics.Lett.,vol61,no.1,1992

3.The structure of GeSi/Si strained layer superlatticesand Heterostructures,Applied Surface Science,48/49(1991)

4.XPS and AES analysis of Si/Ge heterostructure interface,Physica Scripta,Vol.41,1041(1990)

5.Study of GeSi/Si superlattices by ellopsometry,Appl.Phys.,A55,297-300,1992

6.Properties of Fe/Si heterostructure grown by MOCVD,Applied Pysics,A50,237,1990

7.Microstructure of Fe film on Si grown by MOCVD,Superlattices and Microstructures,Vol.4,no.7,1988

8.TSC and PL spectroscopic studies of polyacetylence,Journal of Electron Spectroscopy and related Phenomena(The Netherland),vol.52,589,1990

9.HREM ovservation of defects in VPE GaAs epilayer,Materials letters,vol.7,no.1,1988

10.Spectroscopic studies of Au/P3Mt/Al Structure,Psysica Scripta,vol.41,no.6,1005,1990

11.Low-temperature electrical transport studies of the two-dimentional electron gas at P-InSb interface,J.Vac.Sci.Technol.B5(4),Jul/Aug,1987

12.Observation of a quasi-two-dimentional electron gas at an CdTe/InSb interface,Bull.o the Amarican Psysical Society,vol.40,no.3,1986

13.Current-induced light emission from a laterally anodizing porous silicon Device,Chinese Psysics Letters,1992

14.Comprehensive spectroscopic studies of conducting polymer P3Mt,Science in China(Series A),vol.33,no.11,1370,1990

15.A study of N-Channel enhancement mode InP MISFET,Chinese Journal of Semiconductors,vol.9,no.3,1987

16.The photoluminescence of conducting polymer PeMT,Journal of Luminescene,40/41,1988

17.Polyaniline/Silicon Hterojunctions,Synthetic Metals,41-43(1991),731-734

18.Surface Field Effect of Semiconducting Pulymer PAn,Synthetic Metals,vol.41,1991

19.Study of the behaviour of doped impurity in P3MT by Raman PL and PR spectroscopies,Synthetic Metals,41-43,1991

20.Structural Properties of GeSi/Si strained layer superlattices Grown by RRH/VLP-CVD,Proceedings of 20th ICPS,Aug,1990,Thessaloniki,Greece,vol.2,World Scientific,1990

21.Growth and characterization of GeSi/Si strained layer superlattice,5th international conference on modulation semiconductor structures,Nara,Japan,1991

22.Study on the structure of the MOCVD Fe/Si interface,Proceedings of the 2nd international conference on the structure of Surface,Amsterdam,The Netherland,1987

23.Analysis of MOCVD Single-crystal Fe/GaAs structure,Asia Pacific Syposim on surface physics,330,1987

24.Study of Al2O3/InP interface by AES and XPS,Asia Pacific Syposim on surface physics,336,1987

25.Study of thermal annealing of Si+ implanted,Proceeding of the International Symposium on applicaitons of Ion Beams Produced by Small Acceleratiors,1987,China

26.Fabrications and Properties of GaInAs MIS Structures,proceedings of the international conference on the solid-state and integrated circuit technology,International Academic Publishers,769,1989

27.Study of the structure of GaAs/si,proceedings of 19th International confernce on the physics of semiconductors,559,Warsaw Poland,1988

28.Fundamental excitations in semiconducting polymer P3MT,Proceedings of of 19th International confernce on the physics of semiconductors,559,Warsaw Poland,1988

29.Study of GeSi/Si Heterostructures,ICSOS 3,July 1990,Milwaukee,USA

30.The properties of Plasma-enhanced CVD SiO2-InP MIS structure,proceedings of international conference on semiconductor and integrated circuit technology,P.398-400,1986,World Science,Singapore

31.Study of Photoluminescence fo conducting Polymer P3MT,Proceedings of the 1987 International Conference on Luminescene,1987,Beijing

32.Study of strain and composition of GeSi/Si superlattice by raman spectroscopy,The 5th Asia Pacific Physics Conference

33.The GeSi/Si strained Heterrostructure Grown by RRH/VLP-CVD,International Conference on solid state science and technology,1992,Penang,Malaysia

34.A new low-temperature epitaxial technique for ultrathin semiconductor film-rapid radiant heating very low pressure chemical vapor deposition,International conference on solid state science and technology,1992,Pennang,Malaysia

35.Strain Relaxed GeSi layer grown by RRH/VLP-CVD，E-MRS spring meeting 92,Strasbourg,France

36.Hteroepitaxial Growth of GeSi strained layer on Si by RRH/VLP-CVD,Proceedings of MRS Spring Meeting,1992,San Francisco,USA

37.Infrared Absorption in SiGe/Si Multiple Quantum Wells,Superlattices and Microstructures,Vol.12,No.4,1992

38.Ge Segragation in straind Si/SiGe heterostructure,Proceedings of 21st International conference on physics of semiconductors,Beijing,1992

39.Strain relaxed SiGe layers using x step-graded structure grown on (100) Si by RRH/VLP-CVD,Proceedings of 21st International conference on physics of semiconductors,Beijing,1992

40.Characterization of semiconductor superlattices by ellipsonmetry, Superlattice and Microstructure,vol.12,no.4,1992

41.GeSi/Si heterojunction internal photoemission long wavelength infrared detector fabricated by RRH/VLP-CVD,Proceedings of 1991 International Semiconductor Device Research Symposium,Virginia,USA,1991

42.Light emission from Porous GexSi1-x/Si heterostructure and strained layer superlattice,Proceedings of 21th International conference on physics of Semiconductors,Beijing,1992

43.Study of GeSi/Si strain layer superlattices grown by RRH/VLP-CVD,International symposium on solid state and ingrared physics,Oct.1991,Shanghai

44.测量MOS结构界面特性的变频C-V法，南京大学学报，vol.26,no.2,212,1990

45.测量金属－半导体界面态的肖特基电容谱技术，电子测量与仪器学报，vol.3,no.1,12,1989

46.GaInAs/Al2O3的界面研究，半导体学报，vol.10,no.10,1989

47.N-沟增强型InP MIS FET研究，半导体学报，vol.9,no.3,1988

48.导电聚合物P3MT 的荧光谱，物理学报，vol.37,no.3,1988

49.聚乙炔半导体热激电流谱研究，半导体学报，vol.9,no.6,1988

50.计算机控制和处理的深能级瞬态谱研究，电子学保，vol.16,no.4,1988

51.GaInAs/InP异质结二维电子气，半导体学报， vol.8,no.5,1987

52.PECVD SiO2-InP MIS结构研究，固态电子学研究与进展，vol.7,no.3,1987

53.注硅InP的包封与无包封热退火，固态电子系研究与进展，vol.7,no.1,1987

54.SiO2/InP MIS结构界面态和体深能级研究，南京大学学报，vol.22,no.4,1986

55.PECVD SiO2/InP结构的AES和XPS分析，南京大学学报，vol.22,no.4,1986

56.分子束外延生长CdTe/InSb异质结输运性质研究，半导体物理与教学，p.209，1986

57.用椭偏光学方法研究GeSi超晶格结构，半导体学报，1992

58.GaAs/Si异质外延的新进展，，vol.11,no.4,324,1991

59.GeSi/Si异质界哦故的近红外吸收光谱测量，半导体光电，vol.12,no.4,399,1991

60.RRH/VLP-CVD低温外延硅薄膜电学性质，半导体学报，vol.12,no.7,1991

61.用椭偏光学方法研究GexSi1-x/Si超晶格结构，半导体学报，1992

62.Ga0.47In0.53As/SiO2与Ga0.47In0.53As/Al2O3的界面性质，半导体学报，vol.10,no.10,1989

64.Phonon Partic:pation in the light emission process of Porous Ge Si layer,Chinese phys. Lett.,vol.10,no.5,1993

65.The structure and property of SiGe/Si quantum wells,1993 Materials research society spring meeting,San Francisco,1993

66.Raman scattering spectroscoty of GeSi/Si strained layer superlattice,1993 Materials research society spring meeting,San Francisco,1993

67.Novel Photocurrent Respone fo a porous silicon,1993 Materials research society spring meeting,San Francisco,1993

68.Phase formation and Ge segregation in the thremal reaction between Pt and GeSi/Si Hetewostructure,1993 Materials research society spring meeting,San Francisco,1993

69.锗硅基区异质结双极型晶体管(GeSi-HBT)的研制，固体电子学研究与进展，vol.12,no.4,1992

70.锗硅应变层超晶格生长研究，物理学进展，no.1,1993

71.SiGe/Si应变层超晶格量子阱微结构材料的生长与掺杂技术，锗硅应变层超晶格材料与器件应用（国家科委信息领域办，863光电子主题专家组出版）

72.SiGe/Si应变层超晶格量子阱材料的优化设计及新器件的发展展望，锗硅应变层超晶格材料与器件应用（国家科委信息领域办，863光电子主题专家组出版）

73.Study of Ge movement during thermal reactions between Pt and Ge/Si heterostructures,Appl.phys.lett,vol.62,no.25,1993

74.Si基GaN的微结构表征，光散射学报.2003,15(4)

75.用MOCVD方法制备的GaN1-xPx三元合金的喇曼与红外光谱，半导体学报.2004,25(1)

76.耦合双量子点中基态电子的隧穿特性，半导体学报.2004,25(1)

77.p沟道锗／硅异质纳米结构MOSFET存储器及其逻辑阵列，半导体学报.2004,25(2)

78.Influence of Polarization Effects on the Energy Band of AlGaN／GaN／AlGaN Heterostructures,Chinese Physics Letters（中国物理快报：英文版）.2004,21(4)

79.AlGaN／GaN异质结构欧姆接触的研制，固体电子学研究与进展.2004,24(1)

80.蓝宝石衬底上6H-SiC单晶薄膜的化学气相淀积生长，功能材料.2004,35(2)

81.Zn1-xMgxO薄膜的低压MOCVD生长与性质，半导体学报.2004,25(7)

82.ZnO纳米岛的MOCVD自组装生长，半导体学报.2004,25(7)

83.GaN Growth with Low-Temperature GaN Buffer Layers Directly on Si（111） by Hydride Vapour Phase Epitaxy,Chinese Physics Letters（中国物理快报：英文版）.2004,21(9)

获奖情况

1.1989，“聚合物半导体薄膜及其应用的基础研究”获江苏省科技进步三等奖

2.1988，“InP-MIS界面与InP-MIS晶体管研究”获江苏省科技进步三等奖

3.1990，“半导体变频C-V/G-V方法和VFC-1型微机变频C-V测试系统”获江苏省科技进步三等奖

4.1991.9，获江苏省优秀教育工作者奖

5.1992，获国防科工委光华科技基金一等奖

6.1992，获国家科委国家高技术八六三计划先进工作者一等奖

7.1992，获江苏省优秀科技工作者称号

8.1992，获国务院颁发政府特殊津贴

科研项目

1.1991-1995，负责国家八六三计划项目“GeSi超晶格材料与应用”

2.1991-1995，负责国家重大基础研究项目“GeSi超晶格材料生长、物性和器件开发”