(2) Wang, H.; Lu, Y.; Liu, S.; Yu, J.; Hu, M.; Li, S.; Yang, R.; Watanabe, K.; Taniguchi, T.; Ma, Y.; Miao, X.; Zhuge, F.; He, Y.; Zhai, T. Adaptive Neural Activation and Neuromorphic Processing via Drain‐Injection Threshold‐Switching Float Gate Transistor Memory. Adv. Mater. 2023, 35 (52), e2309099.
Release time:2024-11-07Hits:
Pre One:(1) Yu, J.; Wang, H.; Zhuge, F.; Chen, Z.; Hu, M.; Xu, X.; He, Y.; Ma, Y.; Miao, X.; Zhai, T. Simultaneously Ultrafast and Robust Two-Dimensional Flash Memory Devices Based on Phase-Engineered Edge Contacts. Nat. Commun. 2023, 14 (1), 5662.
