Yanli Zhao*, Dongdong Zhang, Long Qin, Qi Tang, Ruihua Wu, Jianjun Liu, Youping Zhang, Hong Zhang, Xiuhua Yuan, and Wen Liu，InGaAs–InP avalanche photodiodes with dark current limited by generation-recombination, Optics Express, 2011.04.25, 19(9): 8546-8556.
Release time:2018-09-28 Hits:
Pre One:Jingjing Xiang, Yanli Zhao*, Comparison of waveguide avalanche photodiodes with InP and InAlAs multiplication layer for 25 Gb∕s operation, Optical Engineering, 2014.04.28, 53(4)：046106-046109.
Next One:Yanli Zhao*, Impact Ionization in Absorption, Grading, Charge,and Multiplication Layers of InP/InGaAs SAGCM APDs With a Thick Charge Layer, IEEE Transactions On Electron Device, 2013.10.04, 60(10): 3493-3499.
