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曾祥斌
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[11] 基于柔性衬底底栅结构MoS2 TFT器件及制备方法.Invent,ZL201711358320.4,
[12] 一种二维过渡金属硫化物薄膜及其制备方法.Invent,ZL201710679857.4,
[13] 一种二维层状二硫化钼薄膜的光探测器及制备方法.Invent,ZL201820608645.7,
total13 2/2
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