First Author: 19. Y. Zhan

Correspondence Author: C. Wang*

Co-author: G. Yu, J. Xu, J. Li, and

Journal: IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2019)

Included Journals: EI

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: C

DOI number: 10.1109/ICTA48799.2019.9012812

Date of Publication: 2019-11-13

Abstract: This paper proposes a novel Ferroelectric Field-Effect transistor (FeFET) based relaxation oscillator. The novel relaxation oscillator circuit utilizes proposed biasing circuit and unique characteristics of FeFET including negative capacitance (NC), very low subthreshold swing, high transconductance (g m ) and high channel conductance, to achieve ultra-low power and fast start up. Circuit simulation results show that the proposed NC-FeFET based oscillator at 0.6 V in 0.18 µm technology has achieved 88.7% lower power and 81.6% shorter start-up time, than the CMOS-based counterpart.