Paper Publications
Improved Interfacial and Electrical Properties of MoS2 Transistor with High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Release time:2021-05-21 Hits:
Indexed by:Journal paper
Document Code:4
First Author:X. Zhao
Correspondence Author:L. Liu*,W. Tang
Co-author:J. P. Xu,P. Lai
Journal:IEEE Electron Device Lett.
Included Journals:SCI
Affiliation of Author(s):华中科技大学
Place of Publication:美国
Discipline:Engineering
First-Level Discipline:Electronic Science And Technology
Funded by:国家自然科学基金
Document Type:J
Volume:41
Issue:3
Page Number:385-388.
Date of Publication:2020-03-05
Teaching and Research Group:光学与电子信息学院