Indexed by:Journal paper First Author:徐刚 Correspondence Author:方忠 Co-author:Gang Xu, Haijun Zhang, Xi Dai, Zhong Fang Journal:Europhysics Letters Included Journals:SCI Discipline:Science First-Level Discipline:Physics Document Type:J Volume:84 Issue:6 Page Number:67015 Date of Publication:2009-01-26 Abstract:We show, from first-principles calculations, that the hole-doped side of Fe-As–based compounds is different from its electron-doped counterparts. The electron side is characterized as an itinerant metal with Fermi surface nesting, and SDW-to-NM quantum critical point (QCP) is realized by doping. For the hole-doped side, on the other hand, orbital-selective magnetic ordering develops together with checkboard anti-ferromagnetic (AF) ordering without lattice distortion.