Indexed by: Journal paper

First Author: Hongtao Yuan

Correspondence Author: Yulin Chen,Yi Cui,Harold Y Hwang

Co-author: Zahid Hussain,Xiaodong Xu,Yingsheng Huang,Shoucheng Zhang,Zhixun Shen,Alexei Barinov,Mikhail Yablonskikh,Victor Kandyba,Pavel Dudin,Sung-Kwan Mo,Yi Zhang,Kai Yan,Dumitru Dumcenco,Sanfeng Wu,Bo Zhou,Gang Xu,Zhongkai Liu

Journal: Nano Letters

Included Journals: SCI

Discipline: Science

First-Level Discipline: Physics

Document Type: J

Volume: 16

Issue: 8

Page Number: 4738-4745

ISSN No.: 1530-6984

Date of Publication: 2016-08-10

Impact Factor: 12.712

Abstract: Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial. Here, using angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2, and WSe2, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications.

Links to published journals: https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b05107