Xingsheng Wang
Patents
一种超晶格忆阻器功能层材料、忆阻器单元及其制备方法
Release time:2022-06-07 Hits:
Affilication of Author(s):Huazhong University of Science and Technology
Patent Applicant:Xingsheng Wang,Chengxu Wang,Xiangshui Miao
Type of Patent:Invent
Application Number:201911350103.X
Authorization number:ZL201911350103.X
Number of Inventors:3
Application Date:2019-12-24
Authorization Date:2022-06-07
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