Xingsheng Wang

Patents

一种超晶格忆阻器功能层材料、忆阻器单元及其制备方法

Release time:2022-06-07  Hits:
Affilication of Author(s):Huazhong University of Science and Technology Patent Applicant:Xingsheng Wang,Chengxu Wang,Xiangshui Miao Type of Patent:Invent Application Number:201911350103.X Authorization number:ZL201911350103.X Number of Inventors:3 Application Date:2019-12-24 Authorization Date:2022-06-07