Indexed by: Journal paper

First Author: Fan Yang,Yi Wang,Chengxu Wang

Correspondence Author: Xingsheng Wang

Co-author: Yinghao Ma,Xiangshui Miao

Journal: IEEE Electron Device Letters

Included Journals: SCI、EI

Affiliation of Author(s): Huazhong University of Science and Technology

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 43

Issue: 9

Page Number: 1459-1462

ISSN No.: 0741-3106

Key Words: entropy source, memristor, reset process, TRNG circuit

DOI number: 10.1109/LED.2022.3195347

Date of Publication: 2022-08-01

Impact Factor: 4.816

Abstract: Aside from storing data, memristors can also be used as an entropy source, typically by utilizing the random characteristics of the high resistance state (HRS) or set/reset time delay (TD) of memristors. However, obtaining a reliable high-entropy source remains difficult. In this letter, we designed a novel random number generator (TRNG) circuit that takes full advantage of the memristor's randomness of reset switching, combining the HRS and TD entropies to achieve higher entropy. The entire random characteristic is derived from two temporal processes: the charging and discharging of a capacitor connected to the memristor. Experiments and simulations illustrate the function and advantages of the TRNG circuit, and a min-entropy of 0.9989 is attained, which is higher and more robust than two independent sources, and which can be further enhanced by the device design itself.

Links to published journals: https://ieeexplore.ieee.org/document/9845418