·Paper Publications
- [21] (21) Shengman Li, Mengchuan Tian, Qingguo Gao, Mengfei Wang, Tiaoyang Li, Qianlan Hu, Xuefei Li, Yanqing Wu. Nanometre-thin indium tin oxide for advanced high-performance electronics. Nature Materials 2019, 18, 1091-1097..
- [22] (22) Xiong Xiong, Xuefei Li, Mingqiang Huang, Tiaoyang Li, Tingting Gao, and Yanqing Wu. High performance black phosphorus electronic and photonic devices with HfLaO dielectric. IEEE Electron Device Letters 2018, 39, 127-130..
- [23] (23) Lin Liang, Wei Li, Sichao Li, Xuefei Li, and Yanqing Wu. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric. AIP Advances 2018, 8, 125314..
- [24] (24) Qianlan Hu, Sichao Li, Tiaoyang Li, Xin Wang, Xuefei Li and Yanqing Wu. Channel engineering of normally-off AlGaN/GaN MOS-HEMTs by atomic layer etching and high-k dielectric. IEEE Electron Device Letters 2018, 39, 1377-1380..
- [25] (25) Qingguo Gao, Zhenfeng Zhang, Xiaole Xu, Jian Song, Xuefei Li, Yanqing Wu. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nature Communications 2018, 9, 4778..