·Paper Publications
(23) Lin Liang, Wei Li, Sichao Li, Xuefei Li, and Yanqing Wu. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric. AIP Advances 2018, 8, 125314.
Release time:2023-04-10 Hits:
-
Pre One:：
(22) Xiong Xiong, Xuefei Li, Mingqiang Huang, Tiaoyang Li, Tingting Gao, and Yanqing Wu. High performance black phosphorus electronic and photonic devices with HfLaO dielectric. IEEE Electron Device Letters 2018, 39, 127-130.
-
Next One:：
(24) Qianlan Hu, Sichao Li, Tiaoyang Li, Xin Wang, Xuefei Li and Yanqing Wu. Channel engineering of normally-off AlGaN/GaN MOS-HEMTs by atomic layer etching and high-k dielectric. IEEE Electron Device Letters 2018, 39, 1377-1380.