·Paper Publications
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Pre One::
(20) Shengman Li, Mengchuan Tian, Chengru Gu, Runsheng Wang, Mengfei Wang, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu. BEOL compatible 15-nm channel length ultrathin indium-tin-oxide transistors with Ion = 970 μA/μm and On/off ratio Near 10^11 at Vds = 0.5 V, 7-11 Dec. 2019, 2019 IEEE International Electron Devices Meeting (IEDM).
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Next One::
(22) Xiong Xiong, Xuefei Li, Mingqiang Huang, Tiaoyang Li, Tingting Gao, and Yanqing Wu. High performance black phosphorus electronic and photonic devices with HfLaO dielectric. IEEE Electron Device Letters 2018, 39, 127-130.