·Paper Publications
(19) Mengfei Wang, Mengchuan Tian, Zhenfeng Zhang, Shengman Li, Runsheng Wang, Chengru Gu, Xiaoyu Shan, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu. High performance gigahertz flexible radio frequency transistors with extreme bending conditions, 7-11 Dec. 2019, 2019 IEEE International Electron Devices Meeting (IEDM).
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(18) Shengman Li, Chengru Gu, Xuefei Li, Ru Huang, Yanqing Wu. 10-nm channel length indium-tin-oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL compatibility, 12-18 Dec. 2020, 2020 IEEE International Electron Devices Meeting (IEDM).
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(20) Shengman Li, Mengchuan Tian, Chengru Gu, Runsheng Wang, Mengfei Wang, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu. BEOL compatible 15-nm channel length ultrathin indium-tin-oxide transistors with Ion = 970 μA/μm and On/off ratio Near 10^11 at Vds = 0.5 V, 7-11 Dec. 2019, 2019 IEEE International Electron Devices Meeting (IEDM).