Indexed by:Journal paper Journal:Journal of Luminescence Affiliation of Author(s):光电学院，国家光电研究中心 Place of Publication:美国 Discipline:Engineering Funded by:自然科学基金 Document Type:J Volume:175 Page Number:213-216 Key Words:无 DOI number:10.1016/j.jlumin.2016.03.001 Date of Publication:2016-03-01 Teaching and Research Group:c716 Abstract:We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed. Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded. Note:无 Links to published journals:https://doi.org/10.1016/j.jlumin.2016.03.001