一种拓扑相变忆阻器及其制备方法和应用
Release time:2023-11-17
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- Affilication of Author(s):
- 华中科技大学
- Patent Applicant:
- 张润青,肖睿子,缪向水
- Disigner of the Invention:
- 苏睿
- Type of Patent:
- Invent
- Application Number:
- 202311128089.5
- Authorization number:
- CN 116867352 B
- Number of Inventors:
- 5
- Application Date:
- 2023-09-04
- Authorization Date:
- 2023-11-17
- First Author:
- 程伟明
Attachments:
- Pre One:一种导电丝形成区域可控的拓扑相变忆阻器及其制备方法
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