High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling
Release time:2024-11-18
Hits:
- Indexed by:
- Journal paper
- First Author:
- Han Kaizhen et. al.
- Journal:
- IEEE Transactions on Electron Devices
- Volume:
- 68
- Issue:
- 1
- Page Number:
- 118 - 124
- Date of Publication:
- 2020-11-17
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